Si-Integrated BaTiO3 for Electro-Optic Applications: Crystalline and Polarization Orientation Control
Source abstract
Abstract
Recent research has demonstrated that BaTiO 3 epitaxially grown on Si is capable of a large electro-optical response via the Pockels effect crucial for fabricating efficient phase modulators in integrated silicon photonics. However, the typical crystallographic orientation evolution of epitaxial BaTiO 3 on SrTiO 3 -buffered Si yields a dead layer (a region of the film with a low electro-optic response) for most device geometries. We report on a Si-on-insulator-integrated film stack incorporating a MgO buffer layer that effectively alleviates this problem. The film quality is confirmed with crystallographic characterization; electro-optic measurements yield an effective Pockels coefficient of 119 pm/V for a 100 nm thick film.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Photonic and Optical Devices · Photorefractive and Nonlinear Optics · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics, The University of Texas at Austin, Austin, Texas 78712, United States
Department of Materials Science and Engineering, University of California-Irvine, Irvine, California 92697, United States
Irvine Materials Research Institute, University of California-Irvine, Irvine, California 92697, United States
Department of Physics and Astronomy, University of California-Irvine, Irvine, California 92697, United States
Funding
Air Force Office of Scientific Research
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