Ultrathin Amorphous Gallium Oxide Vacuum Ultraviolet Photodetectors
Source abstract
Abstract
Gallium oxide is demonstrated to be an effective material for the detection of vacuum-ultraviolet (VUV) photons. Nanometer thick films of amorphous gallium oxide deposited by atomic layer deposition are found to exhibit large absorptivity in the VUV region 120–200 nm. We leverage the strong absorption of the ultrathin film to fabricate self-powered Schottky diode photodetectors using graphene as a VUV-transparent electrode. Responsivity throughout the VUV is calculated, significantly extending the demonstrated spectral range of gallium oxide-based photodetectors.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · GaN-based semiconductor devices and materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
Applied Materials Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
Funding
High Energy Physics
References (43)
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