DataVXACS Applied Electronic MaterialsPaper
journal article·2021-06-22

Monolithic Free-Standing Large-Area Vertical III-N Light-Emitting Diode Arrays by One-Step h-BN-Based Thermomechanical Self-Lift-Off and Transfer

Soufiane Karrakchou, Suresh Sundaram, Rajat Gujrati, Phuong Vuong, Adama Mballo, Hibat E. Adjmi, Vishnu Ottapilakkal, Walid El Huni, Karim Bouzid, Gilles Patriarche, Ali Ahaitouf, Paul L. Voss, Jean Paul Salvestrini, Abdallah Ougazzaden

ACS Applied Electronic Materials· Volume 3· Issue 6
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Source abstract

Abstract

We demonstrate the fabrication of vertical InGaN light-emitting diodes (LEDs) on large-area free-standing membranes, using a mechanical lift-off technique enabled by 2D h-BN. 30 μm-thick electroplated copper deposited on the epilayer (i) gives rigidity to the structure, preventing crack generation, (ii) functions as a back mirror and as a heat sink, and (iii) enables one-step self-lift-off and transfer of LED structures from h-BN/sapphire during a thermal treatment at 100 °C. Free-standing arrays of LEDs on thick membranes were processed and their electro-optical performance was characterized. This approach can provide a solution for the fabrication of low-cost, wafer scale, crack-free, and highly reproducible free-standing arrays of vertical LEDs with up to centimeter-size areas.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: GaN-based semiconductor devices and materials · Metal and Thin Film Mechanics · Nanowire Synthesis and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250, United States

CNRS, UMI 2958 Georgia Tech—CNRS, 2 Rue Marconi, 57070 Metz, France

Georgia Tech Lorraine, 2 Rue Marconi, 57070 Metz, France

Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332-0250, United States

Institut Lafayette, 2 Rue Marconi, 57070 Metz, France

Centre de Nanosciences et de Nanotechnologies, Université Paris-Saclay, C2N-Site de Marcoussis, Route de Nozay, 91460 Marcoussis, France

Funding

Agence Nationale de la Recherche · Region Grand Est

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