Electroforming-Free Y2O3Memristive Crossbar Array with Low Variability
Source abstract
Abstract
Transition metal oxides play a very important role to develop the memristive crossbar array for nonvolatile memory for storage and logic operations. However, the development of a high-density memristive crossbar array for complex applications is restricted due to low device yield and high device-to-device (D2D) and cycle-to-cycle (C2C) variability in device switching voltages. Here, we report the fabrication of a stable, highly scalable, reproducible, Y2O3-based memristive crossbar array of (15 × 12) on silicon by utilizing a dual ion beam sputtering system. The fabricated crossbar array exhibits the intrinsic nonlinear characteristics of the memristive element by displaying a high endurance (∼7 × 105 cycles), high current ratio (>200), good retention (∼1.5 × 105 s), high device yield, low device-to-device (D2D) (0.25), and cycle-to-cycle (C2C) (0.608) variability in the SET/RESET voltages of the memristive device, which can be further suitable for analog computation and logic operations.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · Photoreceptor and optogenetics research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Hybrid Nanodevice Research Group (HNRG), Department of Electrical Engineering, Indian Institute of Technology Indore, Indore, Madhya Pradesh 453552, India
School of Electronics Engineering (SENSE), VIT University, Chennai, Tamilnadu 600127, India
Department of Electrical and Computer Engineering, Shinshu University, Nagano-380-8553, Japan
Functional Materials and Microsystems Research Group and the Micro Nano Research Facility, RMIT University, Melbourne, Victoria 3001, Australia
Centre for Advanced Electronics (CAE), Indian Institute of Technology Indore, Indore, Madhya Pradesh 453552, India
School of Engineering, RMIT University, Melbourne, Victoria 3001, Australia
Funding
Department of Science and Technology, Ministry of Science and Technology, India · Council for Scientific and Industrial Research
References (55)
Show source-provided references
1. 10.1038/nature0693210.1038/nature06932 ↗
2. 10.1038/nmat202310.1038/nmat2023 ↗
3. 10.1038/s41928-018-0092-210.1038/s41928-018-0092-2 ↗
4. 10.1038/nnano.2015.22110.1038/nnano.2015.221 ↗
5. 10.1038/nmat475610.1038/nmat4756 ↗
6. 10.1038/s41563-019-0291-x10.1038/s41563-019-0291-x ↗
7. 10.1038/nature1444110.1038/nature14441 ↗
8. 10.1002/adfm.20147027910.1002/adfm.201470279 ↗
9. 10.1038/srep4242910.1038/srep42429 ↗
10. 10.1002/adfm.20110018010.1002/adfm.201100180 ↗
11. 10.1038/nmat307010.1038/nmat3070 ↗
12. 10.1021/nl401283q10.1021/nl401283q ↗
13. 10.1038/srep0074410.1038/srep00744 ↗
14. 10.1088/0957-4484/22/48/48520310.1088/0957-4484/22/48/485203 ↗
15. 10.1038/s41467-019-11411-610.1038/s41467-019-11411-6 ↗
16. Ielmini, D.; Waser, R.Resistive Switching: From Fundamentals of Nanoionic Redox Processes to Memristive Device Applications; Wiley-VCH: Weinheim, Germany, 2016; pp 539–561. ISBN: 978-3-527-33417-9.10.1002/9783527680870 ↗
17. 10.1088/0957-4484/22/9/09570210.1088/0957-4484/22/9/095702 ↗
18. 10.1021/acsnano.7b0211310.1021/acsnano.7b02113 ↗
19. 10.1002/aelm.20180014310.1002/aelm.201800143 ↗
20. 10.1038/nature2574710.1038/nature25747 ↗
21. 10.1109/TED.2012.220232010.1109/TED.2012.2202320 ↗
22. 10.1109/JPROC.2018.279084010.1109/JPROC.2018.2790840 ↗
23. 10.1116/1.131448410.1116/1.1314484 ↗
24. 10.1109/TED.2020.298973110.1109/TED.2020.2989731 ↗
25. Nalwa, H. S.Handbook of Surfaces and Interfaces of Materials; Academic Press, 2001; p 1.10.1016/B978-012513910-6/50003-7 ↗
26. 10.1002/adfm.20200710110.1002/adfm.202007101 ↗
27. 10.1002/adfm.20180478210.1002/adfm.201804782 ↗
28. 10.1088/1361-6528/aaa0eb10.1088/1361-6528/aaa0eb ↗
29. 10.1109/LED.2018.287895310.1109/LED.2018.2878953 ↗
30. 10.1109/TNANO.2020.298720010.1109/TNANO.2020.2987200 ↗
31. 10.1039/C5RA13921J10.1039/C5RA13921J ↗
32. 10.1088/1361-6463/aacf1410.1088/1361-6463/aacf14 ↗
33. 10.1088/1361-6641/ab220f10.1088/1361-6641/ab220f ↗
34. 10.1039/C6NR00824K10.1039/C6NR00824K ↗
35. 10.1186/1556-276X-9-29210.1186/1556-276X-9-292 ↗
36. 10.1038/nnano.2012.24010.1038/nnano.2012.240 ↗
37. 10.1038/s41467-019-11411-610.1038/s41467-019-11411-6 ↗
38. 10.1038/s41928-020-00473-w10.1038/s41928-020-00473-w ↗
39. 10.1038/s41467-021-22243-810.1038/s41467-021-22243-8 ↗
40. 10.1039/c3nr01176c10.1039/c3nr01176c ↗
41. 10.1063/1.503078010.1063/1.5030780 ↗
42. 10.1002/smll.20210354310.1002/smll.202103543 ↗
43. 10.3390/electronics906102910.3390/electronics9061029 ↗
44. 10.1002/adfm.20210405410.1002/adfm.202104054 ↗
45. 10.1186/s11671-015-0738-110.1186/s11671-015-0738-1 ↗
46. 10.1007/s11664-017-5445-510.1007/s11664-017-5445-5 ↗
47. 10.1063/1.498346510.1063/1.4983465 ↗
48. 10.1021/acs.nanolett.0c0222710.1021/acs.nanolett.0c02227 ↗
49. 10.1016/j.orgel.2019.10558410.1016/j.orgel.2019.105584 ↗
50. 10.1021/acsami.1c1101410.1021/acsami.1c11014 ↗
51. 10.1109/VLSIT.2015.722368410.1109/VLSIT.2015.7223684 ↗
52. 10.1038/srep2575710.1038/srep25757 ↗
53. 10.1002/adma.20147018910.1002/adma.201470189 ↗
54. 10.1021/nl203206h10.1021/nl203206h ↗
55. 10.1002/adfm.20180633810.1002/adfm.201806338 ↗