Threshold Switching Memristor Based on the BaTiO3/Nb:SrTiO3 Epitaxial Heterojunction for Neuromorphic Computing
Source abstract
Abstract
A highly repeatable threshold switching was found in the Au/Cr/BaTiO3/Nb:SrTiO3/In system. Based on the dependence of threshold and hold voltage on the compliance current and measurement temperature, threshold switching can be ascribed to the formation/disrupture of oxygen vacancy conductive filaments. Short-term synaptic plasticity of biological synapses has been successfully simulated in this device. Furthermore, the short-term depression was found to be greatly enhanced at a small pulse width/amplitude/interval. The short-term potentiation and depression can be successfully switched using an alternating low- and high-frequency pulse sequence. These results provide insights into the potential for using BaTiO3/Nb:SrTiO3 epitaxial heterojunction in neuromorphic computing.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Photoreceptor and optogenetics research · Neural dynamics and brain function
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Henan Key Laboratory of Photovoltaic Materials, Center for Topological Functional Materials, Henan University, Kaifeng 475004, People’s Republic of China
Funding
Natural Science Foundation of Henan Province · Key Scientific Research Project of Colleges and Universities in Henan Province · Plan for Leading Talent of Fundamental Research of the Central China in 2020
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