DataVXACS Applied Electronic MaterialsPaper
journal article·2020-03-24

Nonvolatile Resistive Switching Memory Device Employing CdSe/CdS Core/Shell Quantum Dots as an Electrode Modification Layer

Jianwei Guo, Shen Guo, Xiaoming Su, Sheng Zhu, Yue Pang, Wei Luo, Jianbing Zhang, Huajun Sun, Honglang Li, Daoli Zhang

ACS Applied Electronic Materials· Volume 2· Issue 3
Publisher page
Source abstract

Abstract

Accompanied with great advantages in various fields of performance, memristors show huge potential in the next generation of mainstream storage devices. However, their random distribution of resistance switching voltage has always been one of the problems in applications. In this work, a nonvolatile resistive switching memory device was proposed, which employed CdSe/CdS core/shell quantum dots (QDs) assembled as an electrode modification layer with the device configuration of Pt/CdSe–CdS QDs/TaOx/Ta. The device possesses multiple excellent resistance switching characteristics such as lower and more consistent set/reset threshold voltage and better endurance performance, which is considered as the effect of the electrode modification layer based CdSe/CdS core/shell QDs. A model with an uneven QD/Pt electrode interface was put forward to explain the different resistance switching behaviors, which may be beneficial to the development of the existing research about memristors based on metal oxides and QDs.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Advanced Memory and Neural Computing · Ferroelectric and Negative Capacitance Devices · Transition Metal Oxide Nanomaterials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Optical and Electronic Information, Huazhong University of Science and Technology, 1037 Luoyu Road, Hongshan District, Wuhan City, Hubei Province 430074, PR China

Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Hongshan District, Wuhan City, Hubei Province 430074, PR China

College of Engineering and Applied Sciences, Nanjing University, 22 Hankou Road, Gulou District, Nanjing City, Jiangsu Province 210093, PR China

National Center for Nanoscience and Technology (NCNST), 11 ZhongGuanCun BeiYiTiao, Haidian District, Beijing City 100190, PR China

Funding

Ministry of Education of the People's Republic of China · Natural Science Foundation of Hubei Province · National Natural Science Foundation of China

References (35)

Show source-provided references
1. 10.1038/nature0693210.1038/nature06932 ↗
2. 10.1038/453042a10.1038/453042a ↗
3. 10.1021/nl904092h10.1021/nl904092h ↗
4. 10.1039/c3tc30575a10.1039/c3tc30575a ↗
5. 10.1002/adma.20170540010.1002/adma.201705400 ↗
6. 10.1016/j.nanoen.2018.10.04210.1016/j.nanoen.2018.10.042 ↗
7. 10.1063/1.312601910.1063/1.3126019 ↗
8. 10.1063/1.221933810.1063/1.2219338 ↗
9. 10.1063/1.199265310.1063/1.1992653 ↗
10. 10.1021/am504439910.1021/am5044399 ↗
11. 10.1002/adfm.20170486210.1002/adfm.201704862 ↗
12. 10.1088/0957-4484/23/31/31520210.1088/0957-4484/23/31/315202 ↗
13. 10.1063/1.276015610.1063/1.2760156 ↗
14. 10.1002/adma.20120457210.1002/adma.201204572 ↗
15. 10.1109/ted.2019.291171510.1109/ted.2019.2911715 ↗
16. 10.1021/acs.nanolett.8b0098810.1021/acs.nanolett.8b00988 ↗
17. 10.1039/c8tc05877f10.1039/c8tc05877f ↗
18. 10.1063/1.497748810.1063/1.4977488 ↗
19. 10.1016/j.orgel.2015.10.00210.1016/j.orgel.2015.10.002 ↗
20. 10.1002/adma.20180528410.1002/adma.201805284 ↗
21. 10.1021/nn100335g10.1021/nn100335g ↗
22. 10.1038/nphoton.2012.32810.1038/nphoton.2012.328 ↗
23. 10.1038/nature0485510.1038/nature04855 ↗
24. 10.1016/j.biomaterials.2007.07.01410.1016/j.biomaterials.2007.07.014 ↗
25. 10.1021/jacs.7b0743410.1021/jacs.7b07434 ↗
26. 10.1002/adfm.20180818210.1002/adfm.201808182 ↗
27. 10.1038/nmat353910.1038/nmat3539 ↗
28. 10.1016/j.physb.2005.11.09910.1016/j.physb.2005.11.099 ↗
29. 10.1103/physrevlett.61.236410.1103/physrevlett.61.2364 ↗
30. 10.1063/1.364762910.1063/1.3647629 ↗
31. Sze S. M. · 200610.1002/0470068329 ↗
32. 10.1103/physrevb.53.957910.1103/physrevb.53.9579 ↗
33. 10.1021/jp412389e10.1021/jp412389e ↗
34. 10.1021/nn405827t10.1021/nn405827t ↗
35. 10.1109/jeds.2018.284316210.1109/jeds.2018.2843162 ↗