High Breakdown Strength Schottky Diodes Made from Electrodeposited ZnO for Power Electronics Applications
Source abstract
Abstract
The synthesis of ZnO films by optimized electrodeposition led to the achievement of a critical electric field of 800 kV/cm. This value, which is 2–3 times higher than in monocrystalline silicon, was derived from a vertical Schottky diode application of columnar-structured ZnO films electrodeposited on platinum. The device exhibited a free carrier concentration of 2.5 × 1015 cm–3, a rectification ratio of 3 × 108, and an ideality factor of 1.10, a value uncommonly obtained in solution-processed ZnO. High breakdown strength and high thickness capability make this environment-friendly process a serious option for power electronics and energy harvesting.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: ZnO doping and properties · Ga2O3 and related materials · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical and Computer Engineering, University of Alberta, Edmonton, AB T6G 1H9, Canada
School of Engineering, University of British Columbia, Kelowna, BC V1V 1V7, Canada
Funding
Natural Sciences and Engineering Research Council of Canada · CMC Microsystems · Alberta Innovates - Technology Futures · National Institute for Nanotechnology · Canada First Research Excellence Fund
References (30)
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