DataVXACS Applied Electronic MaterialsPaper
journal article·2021-07-27Open access

Improved Ink-Jet-Printed CdSe Quantum Dot Light-Emitting Diodes with Minimized Hole Transport Layer Erosion

Haodong Tang, Siqi Jia, Shihao Ding, Pai Liu, Jingrui Ma, Xiangtian Xiao, Xiangwei Qu, Haochen Liu, Hongcheng Yang, Bing Xu, Wei Chen, Guangyu Li, Zoe Pikramenou, Carl Anthony, Kai Wang, Xiao Wei Sun

ACS Applied Electronic Materials· Volume 3· Issue 7
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Source abstract

Abstract

Ink-jet printing is a promising deposition technology, which is capable of large-area fabrication and mask-free patterning. For ink-jet-printed quantum dot (QD) light-emitting diodes (LEDs), the QDs are commonly dissolved in a mixture of solvent and thickener ink system. However, the hole transport layer could be eroded by this QD ink, leading to a rough surface morphology and resulting in the leakage of carriers and low device performance. This phenomenon was first and directly observed by using an atomic force microscope and a cross-sectional scanning electron microscope. We, therefore, redesigned the annealing process of the hole transport layer to achieve an optimized smooth surface with a reduced number of defects for ink-jet-printed QD LEDs (QLEDs). Optimized morphology brings back a maximum luminance of over 30,000 cd/m2 and an external quantum efficiency of 7.52% for the ink-jet-printed red QLEDs using CdSe QDs, which are comparable to those of the spin-coated device. Moreover, the operation lifetime of the ink-jet-printed device is also enhanced by the restored surface morphology. An enhanced T50 lifetime of the ink-jet-printed device at 1000 cd/m2 is improved from 26 to 127 h, which converted to a long T50 lifetime of 8013 h, when operated at 100 cd/m2.
Source: openalex_inverted_index · Quality: candidate unverified · Source record ↗

Research context

Materials processing

OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Energy Conversion and Storage Technologies, Southern University of Science and Technology, Ministry of Education, Shenzhen 518055, China

Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices, Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting, Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, and Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen 518055, China

College of Engineering and Physical Sciences, University of Birmingham, Birmingham B15 2TT, U.K.

Key Laboratory of Automobile Materials, Ministry of Education, Department of Materials Science and Engineering, Jilin University, Renmin Street No. 5988, Changchun 130025, China

Shenzhen Planck Innovation Technology Pte., Ltd., Shenzhen 518112, China

Funding

Ministry of Science and Technology of the People's Republic of China · National Natural Science Foundation of China · Guangdong Youth Innovative Talents Project · Key Laboratory for Advanced Quantum Dot Displays and Lighting, Guangdong University · Guangdong Province · Guangdong Basic and Applied Basic Research Foundation · Shenzhen Peacock Team Project · Shenzhen Innovation Project

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