DataVXACS Applied Electronic MaterialsPaper
journal article·2022-01-25

Thermodynamics of Ion-Cutting of β-Ga2O3 and Wafer-Scale Heterogeneous Integration of a β-Ga2O3 Thin Film onto a Highly Thermal Conductive SiC Substrate

Wenhui Xu, Tiangui You, Fengwen Mu, Zhenghao Shen, Jiajie Lin, Kai Huang, Min Zhou, Ailun Yi, Zhenyu Qu, Tadatomo Suga, Genquan Han, Xin Ou

ACS Applied Electronic Materials· Volume 4· Issue 1
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Source abstract

Abstract

Heterogeneous integration of a β-Ga2O3 thin film with a highly thermal conductive substrate by the ion-cutting process is an intelligent technology to overcome the poor-nature thermal conductivity of β-Ga2O3 and to unleash the full potential of β-Ga2O3 in the field of power electronics. Understanding the basic mechanism of the implantation-induced exfoliation behavior of β-Ga2O3 is vital for better application of the ion-cutting technology. In this work, the thermodynamics of β-Ga2O3 surface blistering induced by H implantation was investigated via an in situ temperature-controlled microscopy stage. A large implantation fluence of H was needed for the ion-cutting of β-Ga2O3 because of the large activation energy (2.28 eV) and low utilization ratio of the implanted H ions (∼9%). A continuous micro-crack, which was essential for the exfoliation of the β-Ga2O3 thin film, was observed via a cross-sectional transmission electron microscope. A 2 in. β-Ga2O3 thin film was successfully transferred onto a 4-in. 4H-SiC substrate via the ion-cutting technique. The transferred β-Ga2O3 thin film exhibited great crystalline quality after a CMP and post-annealing process at 900 °C.
Source: openalex_inverted_index · Quality: baseline

Research context

BiomaterialsMaterials processing

OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Advanced Photocatalysis Techniques

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China

Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China

High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

College of Information Science and Engineering, Jiaxing University, Jiaxing 314001, China

Collaborative Research Center, Meisei University, Hino, Tokyo 191-8506, Japan

The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an 710071, China

Funding

K. C. Wong Education Foundation · National Natural Science Foundation of China · Frontier Science Key Program of CAS · Program of Shanghai Academic Research Leader

References (50)

Show source-provided references
1. 10.1063/1.364296210.1063/1.3642962 ↗
2. 10.1063/1.500694110.1063/1.5006941 ↗
3. 10.1063/1.501993810.1063/1.5019938 ↗
4. 10.1063/1.482185810.1063/1.4821858 ↗
5. 10.1063/1.487980010.1063/1.4879800 ↗
6. 10.1109/LED.2016.256813910.1109/LED.2016.2568139 ↗
7. 10.1063/1.493847310.1063/1.4938473 ↗
8. 10.1109/LED.2017.269480510.1109/LED.2017.2694805 ↗
9. 10.1109/LED.2017.270360910.1109/LED.2017.2703609 ↗
10. 10.1063/1.491607810.1063/1.4916078 ↗
11. 10.1088/0268-1242/30/2/02400610.1088/0268-1242/30/2/024006 ↗
12. 10.1063/1.492774210.1063/1.4927742 ↗
13. 10.1063/1.503447410.1063/1.5034474 ↗
14. Xu, W.; Wang, Y.; You, T.; Ou, X.; Han, G.; Hu, H.; Zhang, S.; Mu, F.; Suga, T.; Zhang, Y.; Hao, Y.; Wang, X. In First Demonstration of Waferscale Heterogeneous Integration of Ga2O3 MOSFETs on SiC and Si Substrates by Ion-Cutting Process, 2019 IEEE International Electron Devices Meeting (IEDM), 2019; pp 12.15.11–12.15.14.10.1109/IEDM19573.2019.8993501 ↗
15. 10.1007/s11433-020-1533-010.1007/s11433-020-1533-0 ↗
16. 10.1088/1361-6463/abbeb210.1088/1361-6463/abbeb2 ↗
17. 10.1016/j.fmre.2021.11.00310.1016/j.fmre.2021.11.003 ↗
18. 10.1016/j.jallcom.2015.11.14510.1016/j.jallcom.2015.11.145 ↗
19. 10.1002/pssa.20082443610.1002/pssa.200824436 ↗
20. 10.1016/j.jcrysgro.2020.12551110.1016/j.jcrysgro.2020.125511 ↗
21. 10.1088/1361-6528/aae28110.1088/1361-6528/aae281 ↗
22. 10.1021/acsaelm.9b0035110.1021/acsaelm.9b00351 ↗
23. 10.1088/1361-6641/abb07310.1088/1361-6641/abb073 ↗
24. 10.1016/j.optmat.2020.10999010.1016/j.optmat.2020.109990 ↗
25. 10.1016/j.ceramint.2018.11.22010.1016/j.ceramint.2018.11.220 ↗
26. 10.1063/1.505172010.1063/1.5051720 ↗
27. 10.1149/2.0051911jss10.1149/2.0051911jss ↗
28. 10.7567/APEX.9.08130210.7567/APEX.9.081302 ↗
29. 10.1155/2011/53468910.1155/2011/534689 ↗
30. 10.1063/1.12094510.1063/1.120945 ↗
31. 10.1103/PhysRevB.75.07520110.1103/PhysRevB.75.075201 ↗
32. 10.1063/1.137010910.1063/1.1370109 ↗
33. 10.1038/s41598-017-15094-110.1038/s41598-017-15094-1 ↗
34. 10.1063/1.188518310.1063/1.1885183 ↗
35. 10.1016/j.nimb.2014.09.01710.1016/j.nimb.2014.09.017 ↗
36. 10.1063/5.002733310.1063/5.0027333 ↗
37. 10.1063/1.502992110.1063/1.5029921 ↗
38. 10.1149/2.0221907jss10.1149/2.0221907jss ↗
39. 10.1063/1.514237610.1063/1.5142376 ↗
40. 10.1038/s41598-018-28461-310.1038/s41598-018-28461-3 ↗
41. 10.1023/A:101008543019510.1023/A:1010085430195 ↗
42. 10.1021/la981739d10.1021/la981739d ↗
43. 10.1063/1.11921910.1063/1.119219 ↗
44. 10.1016/j.vacuum.2020.10944010.1016/j.vacuum.2020.109440 ↗
45. 10.1016/j.vacuum.2021.11025310.1016/j.vacuum.2021.110253 ↗
46. 10.1038/s41598-019-55628-310.1038/s41598-019-55628-3 ↗
47. 10.1016/j.jcrysgro.2004.06.04010.1016/j.jcrysgro.2004.06.040 ↗
48. 10.1016/S0022-0248(02)02465-X10.1016/S0022-0248(02)02465-X ↗
49. 10.1016/S0040-6090(02)01262-210.1016/S0040-6090(02)01262-2 ↗
50. 10.1021/acsami.0c1167210.1021/acsami.0c11672 ↗