Flexible One-Dimensional Metal–Insulator–Graphene Diode
Source abstract
Abstract
A novel one-dimensional geometry for metal–insulator–graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed at the 1D edge of Al 2 O 3 -encapsulated graphene with TiO 2 which acts as barrier material. The diodes demonstrate ultrahigh current density since the transport in the graphene and through the barrier is in-plane. The geometry delivers very low capacitive coupling between the cathode and anode of the diode, which shows frequency response up to 100 GHz and ensures potential high-frequency performance up to 2.4 THz. The 1D-MIG diodes are demonstrated to function uniformly and stable under bending conditions down to 6.4 mm bending radius on flexible substrate.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Graphene research and applications · 2D Materials and Applications · Plasmonic and Surface Plasmon Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Advanced Microelectronic Center Aachen (AMICA), AMO GmbH, Otto-Blumenthal-Str. 25, 52074 Aachen, Germany
CIC nanoGUNE, Tolosa Hiribidea 76, 20018 Donostia-San Sebastian, Spain
Dipartimento di Ingegneria dell’Informazione, Università di Pisa, Via Caruso 16, Pisa 56122, Italy
Chair of High Frequency Electronics, RWTH Aachen University, Templergraben 55, 52056 Aachen, Germany
Funding
Deutsche Forschungsgemeinschaft · H2020 Marie Sklodowska-Curie Actions · H2020 Future and Emerging Technologies
References (25)
Show source-provided references
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