journal article·2020-04-28

Ca8Mg7Si9N22:Ce3+—A Yellow-Emitting Nitride Phosphor for White Light Emitting Diodes

Chao Li, Xiao-Ming Wang, Zu-Pei Yang, Huan Jiao

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Abstract

Nitridomagnesosilicate phosphors are promising candidates for white light emitting diodes. Here, we report a yellow nitride phosphor Ca8Mg7Si9N22:Ce3+, which exhibits a broad band emission in the spectral range of 475–675 nm under the excitation of 445 nm. The photoluminescence intensity of Ca8–xMg7Si9N22:xCe3+ (0.01 ≤ x ≤ 0.11) reaches a maximum when x = 0.05. CIE coordinates and the color purity of Ca7.95Mg7Si9N22:0.05Ce3+ are (0.449, 0.531) and 84.0%, respectively. The Ca7.95Mg7Si9N22:0.05Ce3+ phosphor exhibits a good color drifting resistance with a maximum chromaticity shift of 0.0085 at 475 K. By combining the as-synthesized yellow nitride phosphor Ca7.95Mg7Si9N22:0.05Ce3+ and red nitride phosphor SrLiAl3N4:Eu2+ with a commercial blue InGaN chip, an all-nitride white light emitting diode device is fabricated, and a warm white light is generated with chromatic coordinates (0.471, 0.364) and color temperature of 2194 K.
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Research context

OpenAlex topics: Luminescence Properties of Advanced Materials · Advanced Photocatalysis Techniques · Luminescence and Fluorescent Materials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Macromolecular Science of Shaanxi Province, Shaanxi Engineering Laboratory for Advanced Energy Technology, Shaanxi Key Laboratory for Advanced Energy Devices, School of Chemistry & Chemical Engineering, Shaanxi Normal University, Xi’an 710062, China

School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710062, China

Funding

Ministry of Education of the People's Republic of China · National Natural Science Foundation of China · Natural Science Foundation of Shaanxi Province · Science and Technology program of Xi'an

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