DataVXACS Applied Electronic MaterialsPaper
journal article·2019-03-26

Existence of Resistive Switching Memory and Negative Differential Resistance State in Self-Colored MoS2/ZnO Heterojunction Devices

Mayameen S. Kadhim, Feng Yang, Bai Sun, Wentao Hou, Haixia Peng, Yunming Hou, Yongfang Jia, Ling Yuan, Yanmei Yu, Yong Zhao

ACS Applied Electronic Materials· Volume 1· Issue 3
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Source abstract

Abstract

A resistive switching random access memory (RRAM) has occupied great scientific and industrial interest for next-generation data storage technology because of its advantages of nonvolatile behavior, low power consumption, high density, rapid writing/erasing speed, and simple operating system. In this work, the wide spectrum with self-colored ZnO layers on the Ti foil is obtained by varying the sputtering time, and the colors of these ZnO films can be tuned by a MoS2 layer covering. Further, an existence of resistive switching (RS) memory and negative differential resistance (NDR) state in MoS2/ZnO heterojunction devices was demonstrated, in which the bright yellow Ag/MoS2/ZnO/Ti device shows the best performance with long time endurance. This work opens up an opportunity for exploration of the multifunctional components in future electronic applications.
Source: openalex_inverted_index · Quality: baseline

Research context

OpenAlex topics: Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials · Machine Learning and ELM

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Electrical Engineering, Key Laboratory of Magnetic Levitation Technologies and Maglev Trains, Ministry of Education of China, Southwest Jiaotong University, Chengdu, Sichuan 610031, China

Superconductivity and New Energy R&D Center, Southwest Jiaotong University, Chengdu, Sichuan 610031, China

College of Materials Science and Technology, Nanjing University of Aeronautics and Astronautics (NUAA), Yudao Street 29, 210016 Nanjing, China

Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada

Oil Testing and Perforating Company of Daqing Oilfield Limited Company, Daqing, Heilongjiang 163000, China

Funding

National Natural Science Foundation of China · China Postdoctoral Science Foundation · Institute of Plasma Physics, Chinese Academy of Sciences · Ministry of Science and Technology of the People's Republic of China · Science Foundation of Sichuan Province

References (33)

Show source-provided references
1. 10.1021/acsabm.8b0022610.1021/acsabm.8b00226 ↗
2. 10.1021/acsami.6b1481910.1021/acsami.6b14819 ↗
3. Khamcharean C. · 2012
4. 10.1088/1674-1056/21/8/08810110.1088/1674-1056/21/8/088101 ↗
5. 10.1016/j.materresbull.2006.09.00210.1016/j.materresbull.2006.09.002 ↗
6. 10.1021/am506572m10.1021/am506572m ↗
7. 10.1021/am301389u10.1021/am301389u ↗
8. 10.1021/am302778h10.1021/am302778h ↗
9. 10.1021/nl401563810.1021/nl4015638 ↗
10. 10.1063/1.364080610.1063/1.3640806 ↗
11. 10.1063/1.12646410.1063/1.126464 ↗
12. 10.1063/1.494019810.1063/1.4940198 ↗
13. 10.1063/1.269665310.1063/1.2696653 ↗
14. 10.1063/1.500826510.1063/1.5008265 ↗
15. 10.1016/j.cplett.2018.06.06310.1016/j.cplett.2018.06.063 ↗
16. 10.6028/jres.067A.04010.6028/jres.067A.040 ↗
17. 10.1021/la025588x10.1021/la025588x ↗
18. 10.1021/jp311573q10.1021/jp311573q ↗
19. 10.1063/1.503719110.1063/1.5037191 ↗
20. 10.1016/j.apsusc.2017.10.07310.1016/j.apsusc.2017.10.073 ↗
21. 10.3390/ma703215510.3390/ma7032155 ↗
22. 10.3390/electronics403058610.3390/electronics4030586 ↗
23. 10.1002/aelm.20170056710.1002/aelm.201700567 ↗
24. 10.1039/C6TC03607D10.1039/C6TC03607D ↗
25. 10.1063/1.498364610.1063/1.4983646 ↗
26. 10.3390/cryst709026510.3390/cryst7090265 ↗
27. 10.1080/10408436.2016.119298810.1080/10408436.2016.1192988 ↗
28. 10.1039/C4CC05784H10.1039/C4CC05784H ↗
29. 10.1039/C5RA22728C10.1039/C5RA22728C ↗
30. 10.1021/acs.jpcc.7b0997810.1021/acs.jpcc.7b09978 ↗
31. 10.1002/celc.20160000210.1002/celc.201600002 ↗
32. 10.1016/j.apmt.2018.11.00710.1016/j.apmt.2018.11.007 ↗
33. 10.1021/acsami.6b1420610.1021/acsami.6b14206 ↗