Comprehensive Investigation of Negative Capacitance and Inductive Behavior in Pure and 3% and 5% Ni-Doped PVP-Based Au/n-Si (MS) Schottky Diodes (SDs)

High Resolution Image Download MS PowerPoint Slide In this research, the main electrical properties and influence of surface states ( N ss ) on the performance of Au/n-Si (MS) Schottky diodes (SDs) with and without pure and 3% and 5% Ni-doped PVP through capacitance–voltage ( C – V ) and conductance–voltage ( G /ω– V ) measurements within the voltage range of −3.5 V/3.5 V have been investigated. The basic electrical parameters extracted from the C –2 – V plots and Hill–Coleman analysis, providing insight into the doping concentration ( N d ), depletion layer width ( W d ), barrier height (Φ B ), built-in potential ( V bi ), and maximum electric field ( E max ) for each configuration, are included in this article. For all prepared samples, the C – V curves exhibit a clear peak at around 0.8 V, followed by a sharp decline into negative values beyond 2 V, while the G /ω– V characteristics show a rapid increase within this voltage range. To explain this behavior, both C and G /ω were simultaneously plotted as functions of voltage and current. Furthermore, the N ss and the series-resistance ( R s ) were analyzed to understand their influences on the device’s electrical parameters, especially focusing on the negative capacitance (NC), anomalous-peak behavior, and inductive-like response observed at the accumulation region. In addition, the corrections of C m and G m /ω were investigated to understand the effect of R s and interfacial polarization on the electrical properties of pure and Ni-doped PVP samples, where the anomalous peak and NC were greatly enhanced.