Bipolar Resistive Switching in the Ag/Sb2Te3/Pt Heterojunction
Source abstract
Abstract
A bipolar resistive switching (RS) behavior with an asymmetry I–V curve was impressively observed in the Ag/Sb2Te3/Pt heterojunction. The heterojunction with low operating voltage (∼0.6 V) could be repeatedly cycled more than 1000 times between high- and low-resistance states steadily, the cumulative probability curves of which were substantially parallel. Numerical simulation was performed to clarify the electrical conduction mechanism of different resistance states. Based on the results, the synergy model of the conductive filament and the Schottky emission is proposed. This work enriches the material system of resistive random access memory, which is conducive to a profound understanding of the physical mechanism behind the RS behavior, thereby facilitating the further application of memristors in the field of synaptic bionics.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · Photoreceptor and optogenetics research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
National Key Laboratory of Science and Technology on Micro−Nano Fabrication, Shanghai Jiao Tong University, Shanghai 200240, China
Department of Micro−Nano Electronics, Shanghai Jiao Tong University, Shanghai 200240, China
Institute of Nano−Micro Energy, Shanghai Jiao Tong University, Shanghai 200240, China
China Nuclear Power Operation Technology Corporation, LTD., Wuhan 430223, China
Funding
National Natural Science Foundation of China
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