journal article·2005-10

Measurement of electromigration parameters of lead-free SnAg3.5 solder using U-groove lines

Ying-Chao Hsu, De-Chung Chen, P.C. Liu, Chih Chen

Journal of Materials Research· Volume 20· Issue 10
Publisher page

Abstract

Measurement of electromigration parameters in the lead-free solder SnAg3.5 was carried out by utilizing U-groove solder lines and atomic force microscopy in the temperature range of 100–150 °C. The drift velocity was measured, and the threshold current densities of the SnAg3.5 solder were estimated to be 4.4 × 104A/cm2at 100 °C, 3.3 × 104A/cm2at 125 °C, and 5.7 × 103A/cm2at 150 °C. These values represent the maximum current densities that the SnAg3.5 solder can carry without electromigration damage at the three stressing temperatures. The critical products for the SnAg3.5 solder were estimated to be 462 A/cm at 100 °C, 346 A/cm at 125 °C, and 60 A/cm at 150 °C. In addition, the electromigration activation energy was determined to be 0.55 eV in the temperature range of 100–150 °C. These values are very fundamental for current carrying capability and mean-time-to-failure measurement for solder bumps. This technique enables the direct measurement of electromigration parameters of solder materials.
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Research context

OpenAlex topics: Electronic Packaging and Soldering Technologies · 3D IC and TSV technologies · Copper Interconnects and Reliability

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (14)

Show source-provided references
1. 10.1063/1.178883710.1063/1.1788837 ↗
2. 10.1016/S0927-796X(02)00007-410.1016/S0927-796X(02)00007-4 ↗
3. 10.1007/s11664-003-0015-410.1007/s11664-003-0015-4 ↗
4. 10.1063/1.161699310.1063/1.1616993 ↗
5. 7 Jang S.Y. , Wolf J. , Kwon W.S. , and Paik K.W. : UBM (under bump metallization) study for Pb-free electroplating bumping: Interface reaction and electromigration, in Proceedings of the 52nd Electronic Components and Technology Conference, San Diego, CA (IEEE Components, Packaging, and Manufacturing Technology Society, IEEE, New York, 2002), p. 1213.10.1109/ECTC.2002.1008261 ↗
6. 10.1109/6104.98003110.1109/6104.980031 ↗
7. 10.1063/1.151716510.1063/1.1517165 ↗
8. 10.1063/1.161126310.1063/1.1611263 ↗
9. 10.1063/1.140009610.1063/1.1400096 ↗
10. 9 Wu J.D. , Lee C.W. , Zheng P.J. , Lee C.B.J. , and Li S. : Electromigration reliability of SnAg x Cu y flip chip interconnects, in Proceedings of the 54th Electronic Components and Technology Conference, Las Vegas, NV, (IEEE Components, Packaging, and Manufacturing Technology Society, IEEE, New York, 2004), p. 961.10.1109/ECTC.2004.1319455 ↗
11. 10 Lin J.K. , Jang J.W. , and White J. : Characterization of solder joint electromigration for flip chip technology, in Proceedings of the 54th Electronic Components and Technology Conference, New Orleans, LA, (IEEE Components, Packaging, and Manufacturing Technology Society, IEEE, New York, 2003), p. 816.
12. 10.1007/s11664-004-0164-010.1007/s11664-004-0164-0 ↗
13. 10.1016/0022-3697(61)90138-X10.1016/0022-3697(61)90138-X ↗
14. 10.1063/1.200066710.1063/1.2000667 ↗