Silicon carbide grown by liquid phase epitaxy in microgravity

6H and 4H polytype silicon carbide (SiC) layers have been grown on ground and under microgravity conditions by liquid phase epitaxy (LPE) from a solution of SiC in Si-Sc solvent at 1750 °C. The effects of gravity on the growth parameters and material characteristiques have been studied. The growth rate, Sc incorporation, and the structural defects are modified in reduced gravity conditions, while the polytype reproduction of the substrate is not affected. The results obtained are intriguing as to further experiments providing objects for carrier lifetime measurements.