Annealing effect on in-plane alignment and surface morphology of epitaxial Bi4Ti3O12 thin films prepared by the chemical solution deposition
Source abstract
Abstract
Bi4Ti3O12 thin films were grown epitaxially on SrTiO3(100) substrates by chemical solution deposition using metal naphthenates as starting materials. Homogeneous Bi–Ti solution with toluene was spin-coated onto the substrates and pyrolyzed at 500 °C for 10 min in air. Highly c-axis-oriented Bi4Ti3O12 thin films were crystallized by annealing pyrolyzed films at ≥650 °C. The x-ray pole-figure analysis indicated that the Bi4Ti3O12 thin films have an epitaxial relationship with the SrTiO3(100) substrates. The surface morphology of the films annealed at lower temperature, i.e., 650 °C, exhibited flat and smooth surfaces, while films annealed at higher temperatures, i.e., 750 and 800 °C, were characterized by three-dimensional outgrowth.
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Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Microwave Dielectric Ceramics Synthesis · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (13)
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