Organic light-emitting diodes with hydrogenated In-doped ZnO thin films as transparent conductive electrodes

Hydrogenated In-doped ZnO (ZIO:H) films grown at different ratios, R, of hydrogen to argon were deposited at a substrate temperature of 100 °C for the organic light-emitting diodes (OLEDs). The OLEDs with the ZIO:H (R = 0.08) anode achieved a maximum luminance efficiency of 3.4 cd/A and a power efficiency of 0.6 lm/W, which are as good as the values of the control device fabricated on a tin-doped indium oxide (ITO) anode. This indicates that the efficiency of the OLEDs is critically affected by the ratio of injected hydrogen gas during the deposition of the ZIO and that the ZIO:H developed herein is promising as an alternative to conventional ITO.