The temperature-dependent luminescence properties of BaAl_2−xSi_xO_4−xN_x:Eu²⁺ and its application in yellowish-green light emitting diode

The influences of (SiN)⁺ and Eu²⁺ concentration on the optical properties of BaAl_2−xSi_xO_4−xN_x:Eu²⁺ were investigated. The lifetime results show that there are two different cation sites occupied by Eu²⁺ ions and the energy transfer occurs between them. The Huang–Rhys factor and the Stokes energy shift were determined, and thermal quenching with increasing temperature was observed. Finally, intense yellowish-green light emitting diodes (LED) with the color coordinate of (0.2936, 0.4483) under a forward-bias current of 20 mA was successfully fabricated on the basis of a structure consisting of BaAl_2−xSi_xO_4−xN_x:Eu²⁺ phosphor and near-ultraviolet (∼395 nm) GaN chip.