journal article·2010-10

Assembly, formation mechanism, and enhanced gas-sensing properties of porous and hierarchical SnO2hollow nanostructures

Jinyun Liu, Fanli Meng, Yu Zhong, Jinhuai Liu, Guangyu Chen, Yuteng Wan, Kai Qian, Sitaramanjaneya Mouli T.

Journal of Materials Research· Volume 25· Issue 10
Publisher page

Abstract

Hierarchical and hollow SnS2nanostructures as precursors were fabricated via a surfactant-assisted assembly process using sodium dodecyl sulfate as soft templates. The as-prepared SnS2nanostructures were further oxidized to form porous SnO2conversion for investigating their gas-sensing properties in drug-precursor detection. On the basis of a series of time- and ratio-dependent reactions, a formation mechanism of the special nanostructures and factors influencing morphology and structure were determined. Gas-sensing measurements revealed that the porous and hierarchical SnO2hollow nanostructures were sensitive to drug precursors, indicating promising applications in environmental monitoring and public safety investigation. In addition, we found that the assembled SnO2nanomaterials possessed significantly enhanced gas-sensing properties compared with unassembled SnO2with a solid interior.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Gas Sensing Nanomaterials and Sensors · Analytical Chemistry and Sensors · Transition Metal Oxide Nanomaterials

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (39)

Show source-provided references
1. The use of the dusty-gas model for the description of mass transport with chemical reaction in porous media.
2. 10.1016/j.snb.2008.11.01610.1016/j.snb.2008.11.016 ↗
3. Hydrothermal synthesis and gas sensing characters of ZnO nanorods.10.1016/j.snb.2005.03.097 ↗
4. 10.1016/j.talanta.2008.03.05010.1016/j.talanta.2008.03.050 ↗
5. 10.1016/j.snb.2004.06.03710.1016/j.snb.2004.06.037 ↗
6. 10.1021/jp807997410.1021/jp8079974 ↗
7. 10.1016/j.apsusc.2008.11.03010.1016/j.apsusc.2008.11.030 ↗
8. 10.1088/0957-4484/13/5/30410.1088/0957-4484/13/5/304 ↗
9. 10.1016/j.mseb.2008.11.00510.1016/j.mseb.2008.11.005 ↗
10. 10.1016/j.materresbull.2007.09.01410.1016/j.materresbull.2007.09.014 ↗
11. 10.1002/zaac.20040026210.1002/zaac.200400262 ↗
12. 10.1088/0957-0233/14/3/31310.1088/0957-0233/14/3/313 ↗
13. 10.1080/2002409106417410.1080/20024091064174 ↗
14. 10.1088/0957-4484/19/34/34570410.1088/0957-4484/19/34/345704 ↗
15. 10.1002/adfm.20080009910.1002/adfm.200800099 ↗
16. 10.1088/0957-4484/20/34/34570410.1088/0957-4484/20/34/345704 ↗
17. 10.1016/j.snb.2006.12.00910.1016/j.snb.2006.12.009 ↗
18. 10.1088/0957-4484/17/12/01610.1088/0957-4484/17/12/016 ↗
19. 10.1021/la802854d10.1021/la802854d ↗
20. 10.1002/adma.20070123110.1002/adma.200701231 ↗
21. 10.1021/jp900452b10.1021/jp900452b ↗
22. 10.1088/0957-4484/20/28/28550110.1088/0957-4484/20/28/285501 ↗
23. Porous semiconductor chalcogenide aerogels.10.1126/science.1104226 ↗
24. 10.1093/toxsci/kfj20210.1093/toxsci/kfj202 ↗
25. 10.1126/science.111225510.1126/science.1112255 ↗
26. 10.1021/jp052385j10.1021/jp052385j ↗
27. 10.1021/la050118z10.1021/la050118z ↗
28. 10.1002/ejic.20080043210.1002/ejic.200800432 ↗
29. 10.1021/nl802864a10.1021/nl802864a ↗
30. 10.1088/0957-4484/19/44/44560810.1088/0957-4484/19/44/445608 ↗
31. 10.1021/jp902683310.1021/jp9026833 ↗
32. 10.1038/nmat191210.1038/nmat1912 ↗
33. 10.1021/cg800629810.1021/cg8006298 ↗
34. 10.1007/s00339-003-2215-410.1007/s00339-003-2215-4 ↗
35. 10.1021/jp048528410.1021/jp0485284 ↗
36. 10.1021/nl802145n10.1021/nl802145n ↗
37. 10.1088/0957-4484/20/12/12550110.1088/0957-4484/20/12/125501 ↗
38. 10.1016/j.carbon.2009.02.02410.1016/j.carbon.2009.02.024 ↗
39. 10.1021/ja805077q10.1021/ja805077q ↗