journal article·2001-06

Relationship between the microstructure and nanoindentation hardness of thermally evaporated and magnetron-sputtered electrochromic tungsten oxide films

C. W. Ong, H. Y. Wong, G. K. H. Pang, K. Z. Baba-Kishi, C. L. Choy

Journal of Materials Research· Volume 16· Issue 6
Publisher page

Abstract

Tungsten oxide (WOx) films were fabricated by (i) reactive thermal evaporation (RTE) at room temperature with oxygen ambient pressureP_{O2}as a parameter, and (ii) reactive magnetron sputtering (RMS) with substrate temperatureTsas a parameter. The film structure revealed by x-ray photoelectron spectroscopy, x-ray diffraction, density measurements, infrared absorption, and atomic force microscopy was correlated with the nanoindentation hardnessH. The RTE WOxfilms deposited at highP_{o2}were amorphous and porous, whileHdepended appreciably on normalized penetration depthhD(indentation depth/film thickness) due to the closing of the pores at the point of indentation. Decrease inP_{o2}from 10 to 2 × 10−3mtorr led to smaller porosity, weakerhDdependence ofH, and higher averageH(measured athD≈ 0.2 to 0.3, for example). The RMS WOxfilm deposited at room temperature was amorphous and denser than all RTE films. The rise in substrate temperatureTsfirst densified the film structure (up to 110 °C) and then induced crystallization with larger grain size forTs≥ 300 °C. Correspondingly, thehDdependence ofHbecame weaker. In particular,Hof the RMS sample deposited at 110 °C showed a peak athDslightly above 1 owing to pileup at the contact point of indentation. For higherTs, pileup occurred at shallowerhDand the averageH(measured athD≈ 0.2 to 0.3, for example) rose, accompanied by the increase of grain size.
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Research context

OpenAlex topics: Transition Metal Oxide Nanomaterials · ZnO doping and properties · Semiconductor materials and devices

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