Novel in situ production of smooth diamond films
Source abstract
Abstract
We have developed a unique method to produce smooth diamond films using a modified microwave plasma process system. This method consists of sequential in situ deposition and planarization in an electron cyclotron resonance plasma system. Diamond films were deposited to a thickness of 3.0 μm in this system at a pressure of 1.000 Torr from gas mixtures of methanol and hydrogen. Deposition was followed by planarization using a two-grid ion beam extraction process with a pure oxygen plasma at 10 mTorr. The average roughness of the diamond films so produced was as low as 30 nm, which was a factor of two lower than that of the as-deposited diamond films.
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Research context
OpenAlex topics: Thin-Film Transistor Technologies
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References (13)
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