Synthesis of Si₂N₂O nanowires in porous Si₂N₂O–Si₃N₄ substrate using Si powder

The formation of synthesized Si₂N₂O nanowires using the process of Si nitridation depending on the addition of carbon was investigated. The diameter of the Si₂N₂O nanowires having a high aspect ratio of about 50–80 nm was found in the porous Si₂N₂O–Si₃N₄ substrate to which 6 wt% C was added. The synthesized Si₂N₂O nanowires had orthorhombic single-crystal structure covered with a thin (∼2 nm thick) amorphous layer and a large number of stacking faults along the (2 0 0) plane. The photoluminescence spectrum of Si₂N₂O nanowires showed a strong, stable green emission at 540 nm.