Characterization of W/Si multilayers by ultrasoft x-ray emission spectroscopy

The SiL_2.3 emission spectra of amorphous W/Si multilayers were measured. For the as-deposited samples the SiL_2,3 emission spectra have been found to be very close to that of amorphous Si. The formation of WSi₂ phase during annealing of W/Si multilayers at a temperature ≥50 °C was detected. From the SiL_2,3 emission spectra of as-deposited and annealed samples, the amount of W/Si₂ phase was estimated. It is shown that this technique can be used for quantitative estimation of the ratio of amorphous Si and WSi₂ phases in W/Si multilayers.