Reversible multilevel resistance switching of Ag–La_{0.7}Ca_{0.3}MnO₃–Pt heterostructures

Dashan Shang; Lidong Chen; Qun Wang; Zihua Wu; Wenqing Zhang; Xiaomin Li

doi:10.1557/jmr.2008.0072

journal article·2008-02

Reversible multilevel resistance switching of Ag–La_0.7Ca_0.3MnO₃–Pt heterostructures

Dashan Shang, Lidong Chen, Qun Wang, Zihua Wu, Wenqing Zhang, Xiaomin Li

Journal of Materials Research· Volume 23· Issue 2

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Source abstract

Abstract

The electric-pulse–induced resistance switching of the Ag–La_0.7Ca₀₃MnO₃(LCMO)–Pt heterostructures was studied. The multilevel resistance switching (MLRS), in which several resistance states can be obtained, was observed in the switching from high to low resistance state (HRS → LRS) by applying electric pulse with various pulse voltages. The threshold pulse voltages of MLRS are related to the initial resistance values as well as the switching directions. On the other hand, the resistance switching behavior from low to high resistance states (LRS → HRS) shows unobvious MLRS. According to the resistance switching behavior in serial and parallel modes, MLRS was explained by the parallel effect of multifilament forming/rupture in the Ag–LCMO interface layer. The present results suggest a possible application of Ag–LCMO–Pt heterostructures as multilevel memory devices.

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Research context

OpenAlex topics: Advanced Memory and Neural Computing · Magnetic and transport properties of perovskites and related materials · Shape Memory Alloy Transformations

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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