journal article·2005-07-01

In situ Transmission Electron Microscopy Ion Irradiation Studies at Orsay

M-O. Ruault, F. Fortuna, H. Bernas, J. Chaumont, O. Kaïtasov, V.A. Borodin

Journal of Materials Research· Volume 20· Issue 7
Publisher page

Abstract

Crucial features of materials evolution due to ion beam irradiation are often revealed only through studies of process dynamics. We review some significant examples of such experiments performed over the last 25 years with the Orsay in situ facility: a transmission electron microscope setup (with temperature stages operating between 4 and 1000 K) on a medium energy (3–570 keV) ion beam line. New results on nanocavity evolution and metal silicide nanoprecipitates in Si are presented briefly.We show that CoSi2 nanoprecipitate growth is mainly due to the constant Co atom contribution from the ion beam, and CoSi2 platelet growth is the result of a three-dimensional to two-dimensional growth mode transition.
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OpenAlex topics: Ion-surface interactions and analysis · Integrated Circuits and Semiconductor Failure Analysis · Semiconductor materials and interfaces

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