Molecular-Dynamics Analysis of Interfacial Diffusion Between High-Permittivity Gate Dielectrics And Silicon Substrates
Source abstract
Abstract
Interfacial oxygen diffusion from high-permittivity gate dielectrics (ZrO2 and HfO2) into Si substrates in ultra-large-scale integrated circuits must be suppressed to prevent the formation of interfacial layers between the gate dielectrics and the Si substrates. Oxygen diffusion was analyzed by using a molecular dynamics technique that includes many-body interactions and charge transfer between different elements. The analysis results showed that the addition of Ti is effective in suppressing interfacial oxygen diffusion. The results also showed that the diffusion at the ZrO2/Si(111) and HfO2/Si(111) interfaces is much more suppressed than the diffusion at the ZrO2/Si(001) and HfO2/Si(001) interfaces.
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Research context
OpenAlex topics: Semiconductor materials and devices · Integrated Circuits and Semiconductor Failure Analysis · Advanced Surface Polishing Techniques
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References (14)
Show source-provided references
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