Vacancy structures on the GaN(0001) surface
Source abstract
Abstract
Scanning tunneling microscopy images are reported for the wurtzite GaN(0001) surface. Terraces are observed, with three kinds of defect structures that are assigned to ordered N-vacancies: (i) striations perpendicular to the step edges, (ii) row defects spaced about 16 Å that intersect the steps at an angle of 30°, and (iii) “oval” defects that result from intersections of lines of vacancies (oriented at 60° with respect to step edges) with the row defects.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Metal and Thin Film Mechanics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (13)
Show source-provided references
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