journal article·1997-01

The crossover of preferred orientation in TiN film growth: A real time x-ray scattering study

J. H. Je, D. Y. Noh, H. K. Kim, K. S. Liang

Journal of Materials Research· Volume 12· Issue 1
Publisher page

Abstract

The orientational crossover phenomena in a radio-frequency (rf) sputtering growth of TiN films were studied in a real-time synchrotron x-ray scattering experiment. Following the initial random nucleation and growth stage, the growth was dominated by the grains with the (002) planes aligned with the substrate surface. Surprisingly, at later stages, the grains with the (002) growth front tilted away from the surface by about 60° became dominant. The tilting of the growth front resulted in a faceted surface topology that was confirmed by an ex situ AFM study. Our x-ray results suggest that the crossover was driven by the competition between the surface and the strain energy
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Research context

OpenAlex topics: Metal and Thin Film Mechanics · GaN-based semiconductor devices and materials · Copper Interconnects and Reliability

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

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