In situ transmission electron microscopy investigation of threading dislocation motion in passivated thin aluminum films

In situ transmission electron microscopy (TEM) was performed to study dislocation motion during temperature cycles in aluminum films passivated with a SiO₂ layer. The films were cycled from room temperature to 450 °C. Wedge-haped cross-sectional TEM samples were used to retain the constraint of the Si substrate. Besides interactions between dislocations and interfaces, the movement of threading dislocations within the constrained aluminum film was observed. This observation provides an experimental corroboration of the occurrence of threading dislocation motion, which is the basis for rationalizing the high-ield strength of thin films in available models of thin-film plasticity.