journal article·2003-10

Chemical solution deposition of biaxially oriented (Ba,Sr)TiO3 thin films on 〈100〉 Ni

R. J. Ong, J. T. Dawley, P. G. Clem

Journal of Materials Research· Volume 18· Issue 10
Publisher page

Abstract

Biaxially oriented Ba1−xSrxTiO3 (BST) thin films were fabricated under a highly reducing atmosphere (oxygen partial pressure ∼10−18 atm) on base metal substrates (〈100〉 Ni) using a fluorinated chemical solution deposition method. The degree of film orientation was investigated with respect to film annealing temperature and composition (x = 0, 0.33, 0.5, 0.67, 1). The solution synthesis route included fluorinated solvents, donor-dopants, and chelating agents for control of orientation, defect chemistry, and morphology. Free-energy and phase diagrams guided solution development using halide addition to avoid intermediate BaCO3 formation and instead produce direct crystallization of BaTiO3-type materials from BaF2. The degree of (200) orientation of BST films deposited on 〈100〉 Ni substrates displayed a compositional dependence for 0 < x < 1, with a maximum orientation Lotgering factor approaching unity. Low-temperature (500 °C) crystallization of highly oriented films was demonstrated for solution-derived BST on Ni, which may have enabling materials integration implications for capacitors and other applications.
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Research context

OpenAlex topics: Ferroelectric and Piezoelectric Materials · Semiconductor materials and devices · Electronic and Structural Properties of Oxides

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References (30)

Show source-provided references
1. 10.1109/58.65519310.1109/58.655193 ↗
2. 10.1021/cm00028a01910.1021/cm00028a019 ↗
3. 10.1557/JMR.2002.037010.1557/JMR.2002.0370 ↗
4. 10.1109/77.78468510.1109/77.784685 ↗
5. 10.1007/BF0063930010.1007/BF00639300 ↗
6. 10.1016/S0955-2219(98)00430-010.1016/S0955-2219(98)00430-0 ↗
7. Yuzyuk · Phys. Rev. B · 2002 · 6513 · 4107
8. 10.1016/0022-1902(59)80070-110.1016/0022-1902(59)80070-1 ↗
9. Clem · U.S. Patent No. 6 · 2001 · 231 · 666
10. 10.1109/TASC.2003.81183610.1109/TASC.2003.811836 ↗
11. 10.1063/1.36606210.1063/1.366062 ↗
12. Schneider · 1990 · 53
13. 10.1063/1.12620910.1063/1.126209 ↗
14. 10.1557/JMR.2000.016610.1557/JMR.2000.0166 ↗
15. 10.1063/1.147022510.1063/1.1470225 ↗
16. 10.1016/S1466-6049(01)00181-710.1016/S1466-6049(01)00181-7 ↗
17. 10.1063/1.138141610.1063/1.1381416 ↗
18. 10.1016/S1369-8001(02)00041-010.1016/S1369-8001(02)00041-0 ↗
19. 10.1143/JJAP.37.522710.1143/JJAP.37.5227 ↗
20. 10.1063/1.151663010.1063/1.1516630 ↗
21. 10.1557/JMR.1995.141110.1557/JMR.1995.1411 ↗
22. 10.1088/0953-2048/11/10/00910.1088/0953-2048/11/10/009 ↗
23. 10.1126/science.274.5288.75510.1126/science.274.5288.755 ↗
24. 19. U.S. Patent Nos. 5 739 086 (14 April 1998), 5 741 377 (21 April 1998), and 5 898 020 (27 April 1999).
25. 10.1557/JMR.1991.238710.1557/JMR.1991.2387 ↗
26. 10.1111/j.1151-2916.2001.tb01029.x10.1111/j.1151-2916.2001.tb01029.x ↗
27. 10.1557/JMR.2002.024710.1557/JMR.2002.0247 ↗
28. 10.1021/cm00049a01910.1021/cm00049a019 ↗
29. 10.1063/1.147536710.1063/1.1475367 ↗
30. 28. Dworkin A.S. and Bredig M.A. , Oak Ridge National Laboratory Chemistry Division Annual Report, Tech. Rept. ORNL-3994 (1966), p. 102.