Chemical solution deposition of biaxially oriented (Ba,Sr)TiO3 thin films on 〈100〉 Ni
Source abstract
Abstract
Biaxially oriented Ba1−xSrxTiO3 (BST) thin films were fabricated under a highly reducing atmosphere (oxygen partial pressure ∼10−18 atm) on base metal substrates (〈100〉 Ni) using a fluorinated chemical solution deposition method. The degree of film orientation was investigated with respect to film annealing temperature and composition (x = 0, 0.33, 0.5, 0.67, 1). The solution synthesis route included fluorinated solvents, donor-dopants, and chelating agents for control of orientation, defect chemistry, and morphology. Free-energy and phase diagrams guided solution development using halide addition to avoid intermediate BaCO3 formation and instead produce direct crystallization of BaTiO3-type materials from BaF2. The degree of (200) orientation of BST films deposited on 〈100〉 Ni substrates displayed a compositional dependence for 0 < x < 1, with a maximum orientation Lotgering factor approaching unity. Low-temperature (500 °C) crystallization of highly oriented films was demonstrated for solution-derived BST on Ni, which may have enabling materials integration implications for capacitors and other applications.
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Research context
OpenAlex topics: Ferroelectric and Piezoelectric Materials · Semiconductor materials and devices · Electronic and Structural Properties of Oxides
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