Solid-phase epitaxial regrowth of fine-grain polycrystalline silicon
Source abstract
Abstract
Fine-grain polycrystalline silicon has been produced by low-energy pulsed-laser irradiation of copper-implanted amorphous silicon. This fine-grained material can be regrown epitaxially on the (100) substrate using thermal annealing at temperatures ranging from 800°–1000 °C.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Laser Material Processing Techniques · Advanced Surface Polishing Techniques · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (11)
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