Interface reactions and phase equilibrium between Ni/Cu under-bump metallization and eutectic SnPb flip-chip solder bumps

Ni-based under-bump metallization (UBM) for flip-chip application is widely used in today's electronics packaging. In this study, electroplated Ni UBM with different thickness was used to evaluate the interfacial reaction during multiple reflow between Ni/Cu UBM and eutectic Sn–Pb solders in the 63Sn–37Pb/Ni/Cu/Ti/Si3N4/Si multilayer structure. During the first cycle of reflow, Cu atoms diffused through electroplated Ni and formed the intermetallic compound (IMC) (Ni_1−x, Cu_x)₃Sn₄. After more than three times of reflow, Cu atoms further diffused through the boundaries of (Ni_1−x, Cu_x)₃Sn₄ IMC and reacted with Ni and Sn to form another IMC of (Cu_1-y, Ni_y)₆Sn₅. After detailed quantitative analysis by electron probe microanalysis, the values of y were evaluated to remain around 0.4; however, the values of x varied from 0.02 to 0.35. The elemental distribution of IMC in the interface of the joint assembly could be correlated to the Ni–Cu–Sn ternary equilibrium. In addition, the mechanism of (Cu_1−y, Ni_y)₆Sn₅ formation was also probed.