DataVXJournal of Materials ResearchPaper
journal article·2002-04

Lanthanide series doping effects in lead zirconate titanate (PLnZT) thin films

Timothy J. Boyle, Paul G. Clem, Bruce A. Tuttle, Geoffrey L. Brennecka, Jeffrey T. Dawley, Mark A. Rodriguez, Timothy D. Dunbar, William F. Hammetter

Journal of Materials Research· Volume 17· Issue 4
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Source abstract

Abstract

Lanthanide (Ln) doping of lead zirconate titanate (PLnZT 4/30/70) thin films was conducted to investigate effects on structural and electrical properties. Films were spin-coat deposited from precursor solutions made using a previously reported “basic route to PZT” chemistry. The remanent polarization (Pr), dielectric constant (ε), dielectric loss (tan δ), and lattice parameter values were obtained for each of the doped PLnZT films. Films doped with amphoteric cations (Tb, Dy, Y, and Ho) displayed high Pr values, square hysteresis loops, and enhanced fatigue resistance. Smaller radius Ln-doped films display an increased tendency toward (100) orientation in otherwise (111)-oriented films.
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Research context

OpenAlex topics: Ferroelectric and Piezoelectric Materials · Microwave Dielectric Ceramics Synthesis · Electronic and Structural Properties of Oxides

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