Microstructural development in the near-surface region during thermal annealing of Al2O3 implanted with cationic impurities
Source abstract
Abstract
Single-crystal Al2O3 was implanted with cationic impurities in the dose range 1–4 ⊠ 1016/cm2 and subsequently annealed in either an oxidizing or reducing environment. Following annealing at 1200°C or higher, crystalline precipitates or solid solutions are observed, which are consistent with what is expected from the equilibrium phase diagram.
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Research context
OpenAlex topics: Advanced ceramic materials synthesis · Nuclear materials and radiation effects · Semiconductor materials and devices
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