Morphological instabilities in the low pressure synthesis of diamond
Source abstract
Abstract
Morphological instabilities attending the high growth rate of diamond films are examined. Pertinent literature on morphological instabilities and microstructure evolution in vapor deposited films is reviewed and theoretical treatments related to the case of diamond growth are discussed. Diamond films of various thicknesses have been synthesized utilizing the combustion flame synthesis technique involving diamond growth rates of ∼1 μm/min. Films of thicknesses under 20 μm are found to be dense and the surface smoothness of such films is governed by facets on the individual crystallites that make up the film. Increasing film thicknesses, at high growth rates, results in extremely rough surfaces, the trapping of voids and discontinuities, and the incorporation of non-diamond phases in the growing film. These characteristics are typical of morphological instabilities when surface diffusion and re-evaporation processes are absent and instability is promoted by the high rate arrival of the appropriate species from the flame ambient to the surface. Factors contributing to morphological instabilities include competitive shadowing and nutrient starvation and growth anisotropy of the different crystallographic faces on individual diamond crystals. It is shown that surface temperature and the presence of oxidizing species in the flame ambient contribute to anisotropic growth of diamond crystals and hence to morphological instabilities in diamond films. An approach to avoiding these instabilities is briefly discussed.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Diamond and Carbon-based Materials Research · High-pressure geophysics and materials · Force Microscopy Techniques and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (24)
Show source-provided references
1. 10.1103/PhysRevLett.62.78810.1103/PhysRevLett.62.788 ↗
2. 10.1126/science.249.4966.26410.1126/science.249.4966.264 ↗
3. 10.1117/12.94394310.1117/12.943943 ↗
4. 10.1016/0022-0248(78)90395-010.1016/0022-0248(78)90395-0 ↗
5. 6. Ravi K. V. , Joshi A. , and Hu H. S. , Proc. 2nd Int. Conf. on The New Diamond Science and Technology, Washington, DC, 391 (1990).
6. 10.1557/JMR.1991.148410.1557/JMR.1991.1484 ↗
7. 10.1143/JJAP.28.171810.1143/JJAP.28.1718 ↗
8. 11. Bernholc J. , Antonelle A. , and Pantelides S. T. , SDIO/IST Diamond Technology Initiative Symposium, Arlingtpn, VA (July 1988).
9. 10.1557/JMR.1990.235610.1557/JMR.1990.2356 ↗
10. 10.1063/1.10368810.1063/1.103688 ↗
11. 10.1016/0022-0248(83)90411-610.1016/0022-0248(83)90411-6 ↗
12. Matsumoto · Jpn. J. Appl. Phys. · 1982 · 21 · L183.1
13. 4. Ohtake N. , Tokura H. , Kuriyama Y. , Mashimo Y. , and Yoshikawa M. , Proc. 1st Int. Symp. on Diamond and Diamond Like-Films, The Electrochemical Society, 93 (1989).
14. 10.1103/PhysRevLett.60.42410.1103/PhysRevLett.60.424 ↗
15. 5. Hirose Y. , Amanuma S. , Okada N. , and Komaki K. , Proc. 1st Int. Symp. on Diamond and Diamond-Like Films, The Electrochemical Society, 80 (1989).
16. 10.1126/science.243.4894.102310.1126/science.243.4894.1023 ↗
17. 10.1016/0040-6090(88)90034-X10.1016/0040-6090(88)90034-X ↗
18. 10.1063/1.172274210.1063/1.1722742 ↗
19. 10.1080/0141861780823920210.1080/01418617808239202 ↗
20. 10.1063/1.171007910.1063/1.1710079 ↗
21. Watkins · 1979 · 16
22. 10.1103/PhysRevLett.62.77610.1103/PhysRevLett.62.776 ↗
23. 10.1063/1.34537310.1063/1.345373 ↗
24. 10.1063/1.10470310.1063/1.104703 ↗