Knoop hardness anisotropy on {001} faces of germanium and gallium arsenide
Source abstract
Abstract
Knoop hardness measurements have been carried out as a function of azimuthal angle and temperature (in the range 20°–440°C) on {001} faces of n-type, p-type, and intrinsic Ge and GaAs. The degree of hardness anisotropy shown increases with increasing temperature and for Ge is undetectable below a certain temperature which depends on doping. In GaAs, asymmetry in hardness between [110] and [110] directions was found at high temperatures. A new model of hardness anisotropy has been developed, based on detailed modeling of the plastic zone. This relates the hardness to the degree of workhardening in different regions of the plastic zone. Using this model, detailed explanations are given of the hardness anisotropy behavior and of the plastic recovery around indentations.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Force Microscopy Techniques and Applications · Semiconductor materials and interfaces · Integrated Circuits and Semiconductor Failure Analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (30)
Show source-provided references
1. 10.1149/1.242632810.1149/1.2426328 ↗
2. Roberts · 1986 · 13 · 27
3. 10.1080/0141861820823691710.1080/01418618208236917 ↗
4. 10.1098/rspa.1964.011410.1098/rspa.1964.0114 ↗
5. 23 Kent J. , M. Sc. thesis, University of Bristol, 1975.
6. Nadai · 1931 · 247
7. 10.1051/jphyscol:198342910.1051/jphyscol:1983429 ↗
8. 10.1016/0001-6160(57)90129-310.1016/0001-6160(57)90129-3 ↗
9. 16 Pirouz P. and Freeland P. E. (unpublished work).
10. George · Phys. Stat. Sol. · 1979 · 53a · 52
11. 10.1103/PhysRevLett.18.83310.1103/PhysRevLett.18.833 ↗
12. 10.1103/PhysRev.143.60110.1103/PhysRev.143.601 ↗
13. 10.1007/BF0055204010.1007/BF00552040 ↗
14. 10.1098/rspa.1972.001710.1098/rspa.1972.0017 ↗
15. 10.1007/BF0055211410.1007/BF00552114 ↗
16. Feng · Trans. AIME · 1958 · 212 · 47
17. 10.1098/rspa.1971.005510.1098/rspa.1971.0055 ↗
18. Daniels · Trans. Am. Soc. Metals · 1949 · 41 · 419
19. Warren · Philos. Mag. · 1984 · 50 A · L23
20. Garfinkle · Trans. AIME · 1968 · 242 · 809
21. Brookes · 1979 · 383
22. 10.1007/BF0075212110.1007/BF00752121 ↗
23. 10.1143/JJAP.16.73710.1143/JJAP.16.737 ↗
24. Brookes · 1971 · 29
25. 10.1051/jphyscol:198340910.1051/jphyscol:1983409 ↗
26. 18Introduction to the Proceedings of the Conference on Dislocations in Tetrahedrally Coordinated Semiconductors, Hünfeld/Fulda, F. R. G., September 1978, J. Phys. (Paris) 40, Colloque C6 (1979).10.1051/jphyscol:1979606 ↗
27. 10.1007/BF0055527910.1007/BF00555279 ↗
28. Hirsch · Philos. Mag. · 1985 · 52 B · 761
29. 10.1051/jphyscol:197962910.1051/jphyscol:1979629 ↗
30. 10.1063/1.33420110.1063/1.334201 ↗