Evaluation of Cu surface diffusion on different metal liner materials for Cu reflow applications
Source abstract
Abstract
Cu reflow behavior was studied on various metal liners, including Co, Ru, Ta, Ti, and W. These investigations provide insight into the differences in surface diffusion characteristics of Cu along these metal liner interfaces, as revealed by structural characterization using various electron microscopy imaging techniques. In addition, the electrical properties of these metal liner/Cu stacks were investigated as a function of annealing time by evaluating changes in sheet resistance, to understand the extent to which Cu films remain continuous. Atomic force microscopy, transmission electron microscopy, and scanning electron microscopy observations provided insight into the dimensions of Cu islands formed during thermal annealing. On Ta and Ru liners, Cu surface diffusion was found to be most prominent. Compared to Ta and Ru, more Cu islands were formed per area for Co liner, exhibiting a reduced average Cu island size. Only minimal Cu island formation was observed for Ti and W liners.Graphical abstract
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Copper Interconnects and Reliability · Advanced materials and composites · Nanoporous metals and alloys
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (29)
Show source-provided references
1. H.-W. Kim, Electronics 2022(11), 2914 (2022). https://doi.org/10.3390/electronics1118291410.3390/electronics11182914 ↗
2. D. Sonawane, A. Choudhury, P. Kumar, Langmuir 2020(36), 5534 (2020). https://doi.org/10.1021/acs.langmuir.0c0057510.1021/acs.langmuir.0c00575 ↗
3. D. Sonawane, P. Kumar, Nanotechnology 32, 195703 (2021). https://doi.org/10.1088/1361-6528/abe0e710.1088/1361-6528/abe0e7 ↗
4. M. Łapiński, R. Kozioł, W. Skubida, P. Winiarz, R. Elhassan, W. Sadowski, B. Kościelska, Nat. Sci. Rep. 13, 10107 (2023). https://doi.org/10.1038/s41598-023-37343-210.1038/s41598-023-37343-2 ↗
5. Sudheer, P. Mondal, V.N. Rai, A.K. Srivastava, AIP Adv. 7, 075303 (2017). https://doi.org/10.1063/1.498982310.1063/1.4989823 ↗
6. P. Piovano, I. Velčić, J. Nonlinear Sci. 32, 32 (2022). https://doi.org/10.1007/s00332-022-09783-z10.1007/s00332-022-09783-z ↗
7. D. Jing, A. Lii-Rosales, K.C. Lai, Q. Li, J. Kim, M.C. Tringides, J.W. Evans, P.A. Thiel, New J. Phys. 22, 053033 (2020). https://doi.org/10.1088/1367-2630/ab84b510.1088/1367-2630/ab84b5 ↗
8. Z. Zhang, S.-S. Wang, R. Song, T. Cao, L. Luo, X. Chen, Y. Gao, J. Lu, W.-X. Li, W. Huang, Nat. Commun. 8, 488 (2017). https://doi.org/10.1038/s41467-017-00620-610.1038/s41467-017-00620-6 ↗
9. C. Xiao, B.-A. Lu, P. Xue, N. Tian, Z.-Y. Zhou, X. Lin, W.-F. Lin, S.-G. Sun, Joule 4, 2562 (2020). https://doi.org/10.1016/j.joule.2020.10.00210.1016/j.joule.2020.10.002 ↗
10. K. Yu, T. Hasegawa, M. Oie, F. Amano, S. Consiglio, C. Wajda, K. Maekawa, G. Leusink, IEEE International Interconnect Technology Conference 2014 (2014), p. 117. https://doi.org/10.1109/IITC.2014.683185710.1109/IITC.2014.6831857 ↗
11. K. Abe, Y. Harada, M. Yoshimaru, H. Onoda, J. Vac. Sci. Technol. B 22, 721 (2004). https://doi.org/10.1116/1.167661810.1116/1.1676618 ↗
12. T. Onishi, M. Mizuno, T. Yoshikawa, J. Munemasa, M. Mizuno, T. Kihara, H. Araki, Y. Shirai, J. Appl. Phys. 114, 044312 (2013). https://doi.org/10.1063/1.481639610.1063/1.4816396 ↗
13. K. Motoyama, O. van der Straten, J. Maniscalco, M. He, J. Electrochem. Soc. 160, D3211 (2013). https://doi.org/10.1149/2.035312jes10.1149/2.035312jes ↗
14. K. Motoyama, O. van der Straten, H. Tomizawa, J. Maniscalco, S. T. Chen, IEEE International Interconnect Technology Conference (2012). https://doi.org/10.1109/IITC.2012.625165610.1109/IITC.2012.6251656 ↗
15. A. Simon, O. van der Straten, N.A. Lanzillo, C.-C. Yang, T. Nogami, D.C. Edelstein, J. Vac. Sci. Technol. A 38, 053402 (2020). https://doi.org/10.1116/6.000017010.1116/6.0000170 ↗
16. C.-H. Ho, C.-K. Chen, C.-L. Chen, Appl. Sci. 11, 9702 (2021). https://doi.org/10.3390/app1120970210.3390/app11209702 ↗
17. K.M. Takahashi, J. Electrochem. Soc. 147, 1414 (2000). https://doi.org/10.1149/1.139337010.1149/1.1393370 ↗
18. O. van der Straten, J. Wynne, T. Vo, J. Maniscalco, T. Nogami, I. Ali, S. Chiang, J. Ren, P. Ma, ECS Trans. 16, 193 (2008). https://doi.org/10.1149/1.297999410.1149/1.2979994 ↗
19. N.A. Lanzillo, C.-C. Yang, K. Motoyama, H. Huang, K. Cheng, J. Maniscalco, O. Van Der Straten, C. Penny, T. Standaert, K. Choi, IEEE Electron Device Lett. 40, 1804 (2019). https://doi.org/10.1109/LED.2019.294086910.1109/LED.2019.2940869 ↗
20. A. Hashibon, A.Y. Lozovoi, Y. Mishin, C. Elsässer, P. Gumbsch, Phys. Rev. B 77, 094131 (2008). https://doi.org/10.1103/PhysRevB.77.09413110.1103/PhysRevB.77.094131 ↗
21. T.P.C. Klaver, B.J. Thijsse, J. Comput. Aided Mater. Des. 10, 61 (2003). https://doi.org/10.1023/B:JCAD.0000036802.46424.ee10.1023/B:JCAD.0000036802.46424.ee ↗
22. R.M. Hill, N. Mott, Proc. R. Soc. A 309, 377 (1969). https://doi.org/10.1098/rspa.1969.004810.1098/rspa.1969.0048 ↗
23. S.S. Ezzat, P.D. Mani, A. Khaniya, W. Kaden, D. Gall, K. Barmak, K.R. Coffey, J. Vac. Sci. Technol. A 37, 031516 (2019). https://doi.org/10.1116/1.509349410.1116/1.5093494 ↗
24. M. Wislicenus, R. Liske, L. Gerlich, B. Vasilev, A. Preusse, Microelectron. Eng. 137, 11 (2015). https://doi.org/10.1016/j.mee.2014.09.01710.1016/j.mee.2014.09.017 ↗
25. S. Park, Y. Kim, S.E. Kim, J. Electron. Mater. 51, 2617 (2022). https://doi.org/10.1007/s11664-022-09501-110.1007/s11664-022-09501-1 ↗
26. Y. Wei, L. Zhu, Y. Li, Y. Chen, B. Guo, Vacuum 213, 112167 (2023). https://doi.org/10.1016/j.vacuum.2023.11216710.1016/j.vacuum.2023.112167 ↗
27. H. Xu, Y. Yang, T. Engel, Surf. Sci. Lett. 275, L707 (1992). https://doi.org/10.1016/0039-6028(92)90788-810.1016/0039-6028(92)90788-8 ↗
28. L. Castoldi, G. Visalli, S. Morin, P. Ferrari, S. Alberici, G. Ottaviani, F. Corni, R. Tonini, C. Nobili, M. Bersani, Microelectron. Eng. 76, 153 (2004). https://doi.org/10.1016/j.mee.2004.07.04310.1016/j.mee.2004.07.043 ↗
29. H. Mes-adi, K. Saadouni, M. Badawi, M. Mazroui, S. Lebègue, J. Cryst. Growth 586, 126631 (2022). https://doi.org/10.1016/j.jcrysgro.2022.12663110.1016/j.jcrysgro.2022.126631 ↗