Defects and doping in ultra-wide band gap (Al,Ga)N and β-(Al,Ga)2O3 alloys
Source abstract
Abstract
Abstract Si is the n-type dopant of choice for GaN and β-Ga2O3. However, in (Al,Ga)N and β-(Al,Ga)2O3 alloys, when the Al content is increased, the n-type conductivity produced by the added Si impurities is efficiently compensated. The experimentally determined critical Al fractions are about 70% for the (Al,Ga)N alloys and as low as 25% for the β-(Al,Ga)2O3 alloys. AlN and Al2O3 are well known to be poorly n-type dopable even with Si, but the detailed compensation mechanisms in the alloys are not necessarily the same as in the compounds. This short review discusses recent research in Si-doped (Al,Ga)N and β-(Al,Ga)2O3 alloys in the light of the compensation phenomena caused by Si DX center and cation vacancy formation. Graphical abstract
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Research context
OpenAlex topics: Ga2O3 and related materials · Semiconductor materials and devices · ZnO doping and properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (73)
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