Effects of substrate surface polarity on heteroepitaxial growth of pseudobinary ZnO–InN alloy films on ZnO substrates
Source abstract
Abstract
(ZnO)X(InN)1-Xfilms have been epitaxially grown on 0.9%-lattice-mismatched ZnO substrates at 450 °C by sputtering. Films fabricated on O-polar substrates exhibit higher crystal quality and smoother surface. The full width at half-maximum of (0002) rocking curve and the root-mean-square roughness (Rq) of a 30-nm-thick film on O-polar surface are 0.21° and 2.71 nm, respectively, whereas those on Zn-polar one are 0.32° and 4.30 nm, respectively.Rqon O-polar surface further decreases to 0.73 nm as the thickness decreases to 10 nm, where we successfully obtained atomically flat single-crystalline films having atomically sharp interface with the substrates. High-resolution transmission electron microscopy revealed the Stranski–Krastanov (layer plus island) growth for O-polar case and just 3D islanding mode growth for Zn-polar one. All the results indicate the much longer migration length of adatoms on O-polar surface during the film growth, enabling adatoms to reach their thermodynamically favored positions even at low substrate temperature.Graphical abstract
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · ZnO doping and properties · Acoustic Wave Resonator Technologies
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References (31)
Show source-provided references
1. D. Unuchek, A. Ciarrocchi, A. Avsar, K. Watanabe, T. Taniguchi, A. Kis, Room-temperature electrical control of exciton flux in a van der Waals heterostructure. Nature 560, 340–344 (2018). https://doi.org/10.1038/s41586-018-0357-y10.1038/s41586-018-0357-y ↗
2. A.A. High, A.T. Hammack, L.V. Butov, M. Hanson, A.C. Gossard, Exciton optoelectronic transistor. Opt. Lett. 32, 2466 (2007). https://doi.org/10.1364/OL.32.00246610.1364/OL.32.002466 ↗
3. G. Grosso, J. Graves, A.T. Hammack, A.A. High, L.V. Butov, M. Hanson, A.C. Gossard, Excitonic switches operating at around 100K. Nat. Photonics. 3, 577–580 (2009). https://doi.org/10.1038/nphoton.2009.16610.1038/nphoton.2009.166 ↗
4. N. Itagaki, T. Iwasaki, M. Watanabe, T. Den, United States Patent, (2012) US Patent No. 8274078.
5. N. Itagaki, K. Matsushima, D. Yamashita, H. Seo, K. Koga, M. Shiratani, Synthesis and characterization of ZnInON semiconductor: a ZnO-based compound with tunable band gap. Mater. Res. Express. 1, 36405 (2014). https://doi.org/10.1088/2053-1591/1/3/03640510.1088/2053-1591/1/3/036405 ↗
6. R. Furuki, M. Oda, Y. Shinozuka, Electronic structure of (ZnO)1–x(InN)x alloys calculated by interacting quasi-band theory. Jpn. J. Appl. Phys. 58, 21002 (2019). https://doi.org/10.7567/1347-4065/aaf56f10.7567/1347-4065/aaf56f ↗
7. M. Kraut, E. Sirotti, F. Pantle, T. Hoffmann, M. Stutzmann, Band gap control and properties of indium-zinc oxynitride thin films grown by molecular beam epitaxy. J. Phys. Chem. C. 126, 2070–2077 (2022). https://doi.org/10.1021/acs.jpcc.1c0863010.1021/acs.jpcc.1c08630 ↗
8. K. Matsushima, K. Iwasaki, N. Miyahara, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Blue Photoluminescence of (ZnO)0.92(InN)0.08. MRS Adv. 2, 277–282 (2017). https://doi.org/10.1557/adv.2016.62510.1557/adv.2016.625 ↗
9. N. Miyahara, K. Iwasaki, D. Yamashita, D. Nakamura, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Photoluminescence of (ZnO)0.82(InN)0.18 films–Incident light angle dependence–. Mater. Sci. Forum. 941, 2099–2103 (2018)10.4028/www.scientific.net/MSF.941.2099 ↗
10. K. Matsushima, T. Ide, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Densities and surface reaction probabilities of oxygen and nitrogen atoms during sputter deposition of ZnInON on ZnO. IEEE Trans. Plasma Sci. 45, 323–327 (2017). https://doi.org/10.1109/TPS.2016.263212410.1109/TPS.2016.2632124 ↗
11. K. Matsushima, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Room temperature fabrication of (ZnO)x(InN)1–x films with step-terrace structure by RF magnetron sputtering. MRS Adv. 1, 115–119 (2016). https://doi.org/10.1557/adv.2015.5910.1557/adv.2015.59 ↗
12. N. Miyahara, S. Urakawa, D. Yamashita, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki, Sputter epitaxy of (ZnO)x(InN)1–x films on lattice-mismatched sapphire substrate. MRS Adv. 4, 1551–1556 (2019). https://doi.org/10.1557/adv.20110.1557/adv.201 ↗
13. K. Matsushima, R. Shimizu, T. Ide, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki, Fabrication of ZnInON/ZnO multi-quantum well solar cells. Thin Solid Films 587, 106–111 (2015). https://doi.org/10.1016/j.tsf.2015.01.01210.1016/j.tsf.2015.01.012 ↗
14. Q. Guo, O. Kato, A. Yoshida, Thermal stability of indium nitride single crystal films. J. Appl. Phys. 73, 7969–7971 (1993). https://doi.org/10.1063/1.35390610.1063/1.353906 ↗
15. R. Narishige, K. Kaneshima, D. Yamashita, K. Kamataki, K. Koga, M. Shiratani, N. Itagaki, Impact of surface morphologies of substrates on the epitaxial growth of magnetron-sputtered (ZnO)x(InN)1–x films. Jpn. J. Appl. Phys. (2021). https://doi.org/10.35848/1347-4065/abba0c10.35848/1347-4065/abba0c ↗
16. T.R. Thomas, Rough surface (Imperial College Press, London, 1999)
17. S. Chatterjee, N. Biswas, A. Datta, R. Dey, P. Maiti, Atomic force microscopy in biofilm study. Microscopy 63, 269–278 (2014). https://doi.org/10.1093/jmicro/dfu01310.1093/jmicro/dfu013 ↗
18. R. Schifano, H.N. Riise, J.Z. Domagala, A.Y. Azarov, R. Ratajczak, E.V. Monakhov, V. Venkatachalapathy, L. Vines, K.S. Chan, J. Wong-Leung, B.G. Svensson, Comparison of the structural properties of Zn-face and O-face single crystal homoepitaxial ZnO epilayers grown by RF-magnetron sputtering. J. Appl. Phys. (2017). https://doi.org/10.1063/1.497334210.1063/1.4973342 ↗
19. J. Zúñiga-Pérez, V. Consonni, L. Lymperakis, X. Kong, A. Trampert, S. Fernández-Garrido, O. Brandt, H. Renevier, S. Keller, K. Hestroffer, M.R. Wagner, J.S. Reparaz, F. Akyol, S. Rajan, S. Rennesson, T. Palacios, G. Feuillet, Polarity in GaN and ZnO: Theory, measurement, growth, and devices. Appl. Phys. Rev. (2016). https://doi.org/10.1063/1.496391910.1063/1.4963919 ↗
20. S. Zhu, C.H. Su, S.L. Lehoczky, M.T. Harris, M.J. Callahan, P. McCarty, M.A. George, Polarity effects of substrate surface in homoepitaxial ZnO film growth. J. Cryst. Growth. 219, 361–367 (2000). https://doi.org/10.1016/S0022-0248(00)00726-010.1016/S0022-0248(00)00726-0 ↗
21. M. Kubo, Y. Oumi, H. Takaba, A. Chatterjee, A. Miyamoto, M. Kawasaki, Homoepitaxial growth mechanism of ZnO(0001): Molecular-dynamics simulations. Phys. Rev. B 61, 16187–16192 (2000). https://doi.org/10.1103/PhysRevB.61.1618710.1103/PhysRevB.61.16187 ↗
22. H. Makino, H. Shimizu, Influence of crystallographic polarity on the opto-electrical properties of polycrystalline ZnO thin films deposited by magnetron sputtering. Appl. Surf. Sci. 439, 839–844 (2018). https://doi.org/10.1016/j.apsusc.2018.01.10710.1016/j.apsusc.2018.01.107 ↗
23. H. Kato, M. Sano, K. Miyamoto, T. Yao, High-quality ZnO epilayers grown on Zn-face ZnO substrates by plasma-assisted molecular beam epitaxy. J. Cryst. Growth. 265, 375–381 (2004). https://doi.org/10.1016/j.jcrysgro.2004.02.02110.1016/j.jcrysgro.2004.02.021 ↗
24. R. Furuki, M. Oda, Y. Shinozuka, Study on the initial growth mechanism of (ZnO)1–x(InN)x using first-principles calculation. Jpn. J. Appl. Phys. 59, 1–6 (2020). https://doi.org/10.7567/1347-4065/ab658e10.7567/1347-4065/ab658e ↗
25. K. Fujiwara, A. Ishii, T. Abe, K. Ando, Growth mechanisms of ZnO (0001) investigated using the first-principles calculation. Jpn. J. Appl. Phys. 064301, 1–5 (2018)
26. Y.W. Mo, D.E. Savage, B.S. Swartzentruber, M.G. Lagally, Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001). Phys. Rev. Lett. 65, 1020–1023 (1990). https://doi.org/10.1103/PhysRevLett.65.102010.1103/PhysRevLett.65.1020 ↗
27. C. Teichert, Self-organization of nanostructures in semiconductor heteroepitaxy. Phys. Rep. 365, 335–432 (2002). https://doi.org/10.1016/S0370-1573(02)00009-110.1016/S0370-1573(02)00009-1 ↗
28. N. Itagaki, Y. Nakamura, R. Narishige, K. Takeda, K. Kamataki, K. Koga, M. Hori, M. Shiratani, Growth of single crystalline films on lattice-mismatched substrates through 3D to 2D mode transition. Sci. Rep. 10, 1–10 (2020). https://doi.org/10.1038/s41598-020-61596-w10.1038/s41598-020-61596-w ↗
29. Y. Nakamura, N. Yamashita, K. Kamataki, T. Okumura, K. Koga, M. Shiratani, N. Itagaki, Growth of single-crystalline ZnO films on 18%-lattice-mismatched sapphire substrates using buffer layers with three-dimensional Islands. Cryst. Growth Des. 22, 3770–3777 (2022). https://doi.org/10.1021/acs.cgd.2c0014510.1021/acs.cgd.2c00145 ↗
30. M. Rao, D. Kim, S. Mahajan, Compositional dependence of phase separation in InGaN layers. Appl. Phys. Lett. 85, 1961–1963 (2004). https://doi.org/10.1063/1.179132710.1063/1.1791327 ↗
31. Y. Huang, A. Melton, B. Jampana, M. Jamil, J.H. Ryou, R.D. Dupuis, I.T. Ferguson, Compositional instability in strained InGaN epitaxial layers induced by kinetic effects. J. Appl. Phys. (2011). https://doi.org/10.1063/1.362643410.1063/1.3626434 ↗