Structural and optical properties of sputtered Bi2Se3 thin films on sapphire (0001), quartz and GaN/sapphire (0001)
Source abstract
Abstract
Thin films of Bi2Se3were deposited on various substrates such as sapphire (0001), quartz, and GaN/sapphire (0001) using magnetron sputtering. The crystalline quality of deposited thin films was studied by high-resolution X-ray diffraction and {0003n} diffraction confirms that the films are oriented along thec-axis. Raman spectroscopy measurements revealed the pure rhombohedral phase of Bi2Se3thin films. These films possess truncated hexagonal morphology, and elemental analysis showed stoichiometric Bi2Se3. The chemical and electronic states of the Bi2Se3thin films were validated by X-ray photoelectron spectroscopy which revealed the formation of Bi2Se3compound. The optical properties of the Bi2Se3thin films were studied using broadband absorption spectroscopy and the optical bandgap of Bi2Se3thin films (~ 150 nm) was found in the range of 1.40–1.48 eV. The Bi2Se3thin film deposited using magnetron sputtering with good structural and optical quality will pave the way for the development of futuristic devices.Graphical abstract
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Topological Materials and Phenomena · Advanced Thermoelectric Materials and Devices · 2D Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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