Chemical vapor deposition growth of magnesium-doped hexagonal boron nitride films via in situ doping
Source abstract
Abstract
In this study, direct, single-step growth of bandgap-tunable magnesium-doped hexagonal boron nitride (hBN) films on silicon (100) substrates via in situ doping by low-pressure chemical vapor deposition is accomplished. Magnesium nitride is used as the magnesium source, and ammonia borane was used as a single-source precursor for boron and nitrogen for the CVD growth of Mg-doped hBN films. The grown films are analyzed by X-ray photoelectron spectroscopy, and the bandgap analysis of the Mg-doped hBN films is established for the first time by UV–vis spectroscopy. X-ray fluorescence spectroscopy is applied for the first time for qualitative and semi-quantitative analysis of the grown films. It is found that Mg is successfully incorporated into the hBN films, and Mg-doped hBN films with tunable bandgap are grown by controlling the Mg concentration in the grown films.Graphical abstractKubelka-Munk function vs. Wavelength of Mg-doped hBN films
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Research context
OpenAlex topics: Graphene research and applications · Diamond and Carbon-based Materials Research · 2D Materials and Applications
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