Atomic layer deposition of cubic tin–calcium sulfide alloy films
Source abstract
Abstract
We deposit films of tin–calcium sulfide by atomic layer deposition (ALD) and demonstrate the metastability of this material. Rough and spiky films are obtained by using Sn and Ca precursors with different ligands, whereas compact and smooth films are obtained when the two metal sources share the same ligands. Compositional and quartz crystal microbalance results indicate that part of the underlaying SnS film is replaced and/or removed during the CaS ALD cycle during the ternary film deposition, possibly via a temperature-dependent cation exchange mechanism. The crystal structure transforms from orthorhombic to cubic as the calcium content increases. Furthermore, resistivity increases with calcium content in the alloy films, whereas optical band gap only depends weakly on Ca content. After annealing at 400 °C in an H2S environment, the cubic alloy film undergoes a phase transition into the orthorhombic phase and its resistivity also decreases. Both phenomena could be explained by phase separation of the metastable alloy.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and devices · Chalcogenide Semiconductor Thin Films · Semiconductor materials and interfaces
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (41)
Show source-provided references
1. 10.1021/cm201412p10.1021/cm201412p ↗
2. Structure of evaporated tin sulphide
3. 10.1063/1.481145510.1063/1.4811455 ↗
4. 10.1039/C7TA03694A10.1039/C7TA03694A ↗
5. 10.1016/0030-4018(86)90270-110.1016/0030-4018(86)90270-1 ↗
6. 10.1021/acs.chemmater.6b0532310.1021/acs.chemmater.6b05323 ↗
7. 10.1016/j.apsusc.2011.02.11610.1016/j.apsusc.2011.02.116 ↗
8. 10.1021/acs.inorgchem.7b0162310.1021/acs.inorgchem.7b01623 ↗
9. 10.1039/C6CE00647G10.1039/C6CE00647G ↗
10. 10.1021/acs.cgd.7b0110010.1021/acs.cgd.7b01100 ↗
11. 10.1002/pip.250410.1002/pip.2504 ↗
12. 10.1116/1.366475810.1116/1.3664758 ↗
13. 10.1002/anie.20160240610.1002/anie.201602406 ↗
14. 10.1063/1.486897410.1063/1.4868974 ↗
15. 38. Yang, C. : Development of tin(II) sulfide solar cells by interface engineering and absorber alloying. Ph.D. thesis, Harvard University, Cambridge, 2017.
16. 10.1021/acs.nanolett.5b0020910.1021/acs.nanolett.5b00209 ↗
17. 10.1002/pssa.20153240510.1002/pssa.201532405 ↗
18. 10.1016/0169-4332(94)90274-710.1016/0169-4332(94)90274-7 ↗
19. 10.1126/sciadv.170027010.1126/sciadv.1700270 ↗
20. 10.1039/C5RA23092F10.1039/C5RA23092F ↗
21. 10.1149/1.291719810.1149/1.2917198 ↗
22. 10.1063/1.478985510.1063/1.4789855 ↗
23. Making record-efficiency SnS solar cells by thermal evaporation and atomic layer deposition
24. 10.1002/aenm.20140049610.1002/aenm.201400496 ↗
25. 10.1016/j.mattod.2014.04.02610.1016/j.mattod.2014.04.026 ↗
26. 10.1007/978-1-4899-6373-410.1007/978-1-4899-6373-4 ↗
27. 10.1063/1.367588010.1063/1.3675880 ↗
28. 10.1063/1.175481210.1063/1.1754812 ↗
29. 41. Sinsermsuksakul, P. : Development of earth-abundant tin(II) sulfide thin-film solar cells by vapor deposition. Ph.D. thesis, Harvard University, Cambridge, 2013.
30. 10.1016/j.solener.2016.09.04610.1016/j.solener.2016.09.046 ↗
31. 10.1021/acs.chemmater.7b0185610.1021/acs.chemmater.7b01856 ↗
32. 10.1038/natrevmats.2017.7010.1038/natrevmats.2017.70 ↗
33. 10.1021/acs.nanolett.6b0363810.1021/acs.nanolett.6b03638 ↗
34. 10.1063/1.475790710.1063/1.4757907 ↗
35. 10.1021/cr900056b10.1021/cr900056b ↗
36. 10.1021/cm960607810.1021/cm9606078 ↗
37. 10.1063/1.177704710.1063/1.1777047 ↗
38. 10.1016/j.tsf.2009.03.00310.1016/j.tsf.2009.03.003 ↗
39. 10.1002/aenm.20110033010.1002/aenm.201100330 ↗
40. 10.1016/j.solmat.2006.06.01210.1016/j.solmat.2006.06.012 ↗
41. 10.1021/jp309154s10.1021/jp309154s ↗