Contact fatigue of silicon
Source abstract
Abstract
Macroscopic cracks in bulk silicon are generally considered to be immune to fatigue. Here, evidence for pronounced fracture-related fatigue damage in cyclic contact loading of (001) monocrystalline silicon with hard spheres of millimeter-scale radius is presented. The periodic indentation field generates ring cracks around the contact, which proliferate with continued cycling. Copious debris in the form of slabs and particulates is ejected from within the crack walls onto the specimen surface. Continued ejection leads ultimately to large-scale surface removal. The fatigue damage progressively degrades the material strength, more rapidly at higher contact load. Implications concerning the function of silicon devices, including microelectro-mechanical systems, will be briefly discussed.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Surface Polishing Techniques · Force Microscopy Techniques and Applications · Integrated Circuits and Semiconductor Failure Analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (43)
Show source-provided references
1. 10.1002/adem.20060026910.1002/adem.200600269 ↗
2. 10.1111/j.1151-2916.1991.tb04109.x10.1111/j.1151-2916.1991.tb04109.x ↗
3. 10.1557/JMR.2004.034310.1557/JMR.2004.0343 ↗
4. 10.1111/j.1151-2916.1998.tb02580.x10.1111/j.1151-2916.1998.tb02580.x ↗
5. 10.1063/1.154111010.1063/1.1541110 ↗
6. 10.1557/jmr.2004.19.1.2210.1557/jmr.2004.19.1.22 ↗
7. 10.1063/1.280139010.1063/1.2801390 ↗
8. 10.1016/S1359-6454(02)00158-110.1016/S1359-6454(02)00158-1 ↗
9. 10.4028/www.scientific.net/KEM.233-236.60910.4028/www.scientific.net/KEM.233-236.609 ↗
10. 10.1002/pssa.1970002010210.1002/pssa.19700020102 ↗
11. Fracture modes in brittle coatings with large interlayer modulus mismatch.10.1557/JMR.1999.0514 ↗
12. 10.1098/rspa.1967.013810.1098/rspa.1967.0138 ↗
13. 10.1016/S0924-4247(02)00328-X10.1016/S0924-4247(02)00328-X ↗
14. 10.1126/science.263.5150.111410.1126/science.263.5150.1114 ↗
15. 10.1080/0141861020823570510.1080/01418610208235705 ↗
16. 10.1016/j.actamat.2004.03.04310.1016/j.actamat.2004.03.043 ↗
17. 10.1557/JMR.2003.010410.1557/JMR.2003.0104 ↗
18. 10.1017/CBO978113917173110.1017/CBO9781139171731 ↗
19. 10.1016/S0924-4247(99)00366-010.1016/S0924-4247(99)00366-0 ↗
20. Surface energy of germanium and silicon.
21. 10.1111/j.1151-2916.1995.tb08834.x10.1111/j.1151-2916.1995.tb08834.x ↗
22. 10.1038/295511a010.1038/295511a0 ↗
23. 10.1063/1.177934410.1063/1.1779344 ↗
24. 10.1007/s10853-006-6567-y10.1007/s10853-006-6567-y ↗
25. Fracture toughness of silicon.
26. 10.1111/j.1151-2916.1980.tb10697.x10.1111/j.1151-2916.1980.tb10697.x ↗
27. 10.1007/BF0054062310.1007/BF00540623 ↗
28. 10.1016/S0924-4247(01)00709-910.1016/S0924-4247(01)00709-9 ↗
29. 10.1557/JMR.1997.013110.1557/JMR.1997.0131 ↗
30. 10.1098/rspa.1999.047810.1098/rspa.1999.0478 ↗
31. Fatigue failure in polysilicon not due to simple stress corrosion cracking.10.1126/science.298.5596.1215 ↗
32. 10.1016/j.cossms.2003.12.00210.1016/j.cossms.2003.12.002 ↗
33. 10.1007/BF0241052710.1007/BF02410527 ↗
34. 10.1111/j.1460-2695.2006.01042.x10.1111/j.1460-2695.2006.01042.x ↗
35. 10.1063/1.165584710.1063/1.1655847 ↗
36. 10.1016/S1359-6454(03)00290-810.1016/S1359-6454(03)00290-8 ↗
37. 10.1098/rspa.1955.013110.1098/rspa.1955.0131 ↗
38. 10.1098/rspa.1955.013210.1098/rspa.1955.0132 ↗
39. 10.1098/rspa.1967.013710.1098/rspa.1967.0137 ↗
40. 10.1109/16.84830210.1109/16.848302 ↗
41. 10.1109/84.94677410.1109/84.946774 ↗
42. 10.1088/0370-1301/70/5/30910.1088/0370-1301/70/5/309 ↗
43. 10.1557/JMR.2001.020910.1557/JMR.2001.0209 ↗