Effect of ammonium-species addition on tantalum chemical mechanical polishing with oxalic-acid-based slurries
Source abstract
Abstract
Manufacturing magnetoresistive random access memory (MRAM) requires the chemical mechanical polishing (CMP) of its bottom electrode, which is made of tantalum (Ta). The effect of ammonium citrate on the Ta removal rate (RR) and surface roughness of oxalic-acid-based slurries was investigated in this study. Additionally, the complexation mechanism of NH4 + and oxalic acid to Ta was explored by electrochemical experiments and X-ray photoelectron spectroscopy (XPS) analysis. According to the obtained findings, the RR and surface quality of Ta were improved with the addition of ammonium. The RRs of Ta and tetraethyl orthosilicate (TEOS) in the optimized slurry are 954 Å min−1and 242 Å min−1, respectively. The root-mean-square (RMS) and peak-to-valley (P/V) of the Ta wafer after polishing reached 0.192 nm and 1.58 nm respectively by atomic force microscope (AFM). However, more detailed studies are needed to confirm the reproducibility of this initial observation, for using them for commercialization and use in industrial applications.Graphical abstract
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Surface Polishing Techniques · Electronic and Structural Properties of Oxides · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (32)
Show source-provided references
1. M. Buchbinder, O. Eli, S. Rozental, Y. Bouhnik, S. Greenberg, K. Mani, Y. Cohen, K. Mackay, J. Pereira, J.A. Herault, Integrating MTJ devices into a 130nm CMOS process flow. Adv. Sci. Technol. 99, 81–89 (2017). https://doi.org/10.4028/www.scientific.net/AST.99.8110.4028/www.scientific.net/AST.99.81 ↗
2. H. Zhang, X. Ma, C. Jiang, J. Yin, S. Lyu, S. Lu, X. Shang, B. Man, C. Zhang, D. Li, Integration of high-performance spin-orbit torque MRAM devices by 200-mm-wafer manufacturing platform. J. Semicond. 43(10), 102501 (2022). https://doi.org/10.1088/1674-4926/43/10/10250110.1088/1674-4926/43/10/102501 ↗
3. E. O’Sullivan, D. Edelstein, N. Marchack, M. Lofaro, M. Gaidis, E. Joseph, A. Annunziata, D. Pfeiffer, P. Trouilloud, Y. Zhu, Critical BEOL aspects of the fabrication of a thermally-assisted MRAM device. ECS Trans. 69(3), 127 (2015). https://doi.org/10.1149/06903.0127ecst10.1149/06903.0127ecst ↗
4. T. Kim, S.J. Park, J. Noh, W. Park, I.H. Song, Y.K. Kim, Current aspects and future perspectives of high-density MRAM. Physica status solidi (a) 201(8), 1617–1620 (2004). https://doi.org/10.1002/pssa.20030453910.1002/pssa.200304539 ↗
5. H. Honjo, H. Sato, S. Ikeda, S. Sato, T. Watanebe, S. Miura, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, 10 nm\phi perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction with over 400° C high thermal tolerance by boron diffusion control. Symp. on VLSI Technol. 2015, T160–T161 (2015). https://doi.org/10.1109/VLSIT.2015.722366110.1109/VLSIT.2015.7223661 ↗
6. J. Park, W. Jeong, H. Kim, J. Oh, H. C. Koo, G. Koh, G. Jeong, H. Jeong, Y. Jeong, S. Cho, An 8F2 MRAM technology using modified metal lines. Technical Digest-International Electron Devices Meeting, pp. 827–830 (2003). https://doi.org/10.1109/IEDM.2003.1269407.10.1109/IEDM.2003.1269407 ↗
7. H. Koike, S. Miura, H. Honjo, T. Watanabe, H. Sato, S. Sato, T. Nasuno, Y. Noguchi, M. Yasuhira, T. Tanigawa, Demonstration of yield improvement for on-via MTJ using a 2-Mbit 1T-1MTJ STT-MRAM test chip. 2016 IEEE 8th International Memory Workshop (IMW), 1–4 (2016). https://doi.org/10.1109/IMW.2016.749526410.1109/IMW.2016.7495264 ↗
8. T. Kim, Y.K. Kim, W. Park, Technological issues for high-density MRAM development. J. Magn. Magn. Mater. 282, 232–236 (2004). https://doi.org/10.1016/j.jmmm.2004.04.05210.1016/j.jmmm.2004.04.052 ↗
9. G. Zhao, Z. Wei, W. Wang, D. Feng, A. Xu, W. Liu, Z. Song, Review on modeling and application of chemical mechanical polishing. Nanotechnol. Rev. 9(1), 182–189 (2020). https://doi.org/10.1515/ntrev-2020-001610.1515/ntrev-2020-0016 ↗
10. Z. Zhang, L. Liao, X. Wang, W. Xie, D. Guo, Development of a novel chemical mechanical polishing slurry and its polishing mechanisms on a nickel alloy. Appl. Surf. Sci. 506, 144670 (2020). https://doi.org/10.1016/j.apsusc.2019.14467010.1016/j.apsusc.2019.144670 ↗
11. H. Cui. 한양대학교, 2014.
12. H. Yan, X. Niu, M. Qu, F. Luo, N. Zhan, J. Liu, Y. Zou, A review: research progress of chemical–mechanical polishing slurry for copper interconnection of integrated circuits. Int. J. Adv. Manuf. Technol. (2023). https://doi.org/10.1007/s00170-022-10775-210.1007/s00170-022-10775-2 ↗
13. S. Janjam, C. Surisetty, S. Pandija, D. Roy, S. Babu, Oxalic-acid-based slurries with tunable selectivity for copper and tantalum removal in CMP. Electrochem. Solid-State Lett. 11(3), H66 (2008). https://doi.org/10.1149/1.282911210.1149/1.2829112 ↗
14. J. Zheng, B. Klug, D. Roy, Electrochemical investigation of surface reactions for chemical mechanical planarization of tantalum in oxalic acid solutions. J. Electrochem. Soc. 155(5), H341 (2008). https://doi.org/10.1149/1.288382510.1149/1.2883825 ↗
15. Z. Wang, J. Zhou, C. Wang, J. Zhang, Q. Wang, R. Wang, Role of ammonium ions in colloidal silica slurries for Ru CMP. ECS J. Solid State Sci. Technol. 8(4), P285 (2019). https://doi.org/10.1149/2.0171904jss10.1149/2.0171904jss ↗
16. P.P. Sharma, I. Suni, M. Brands, Y. Li, Poly (ethyleneimine) as a passivating agent for Ta chemical mechanical planarization. Electrochem. Solid-State Lett. 13(12), H416 (2010). https://doi.org/10.1149/1.348907210.1149/1.3489072 ↗
17. Y. Chen, T. Tsai, S. Yen, Acetic acid and phosphoric acid adding to improve tantalum chemical mechanical polishing in hydrogen peroxide-based slurry. Microelectron. Eng. 87(2), 174–179 (2010). https://doi.org/10.1016/j.mee.2009.07.00910.1016/j.mee.2009.07.009 ↗
18. H. Asano, A. Yasui, T. Hirano, K. Tamai, H. Morinaga, Disappearance of barrier metal during cu chemical mechanical planarization processing and its mechanism. Jpn. J. Appl. Phys 50(5S1), 05EC08 (2011). https://doi.org/10.1143/JJAP.50.05EC0810.1143/JJAP.50.05EC08 ↗
19. K. Assiongbon, S. Emery, V. Gorantla, S. Babu, D. Roy, Electrochemical impedance characteristics of Ta/Cu contact regions in polishing slurries used for chemical mechanical planarization of Ta and Cu: considerations of galvanic corrosion. Corros. Sci. 48(2), 372–388 (2006). https://doi.org/10.1016/j.corsci.2005.01.00810.1016/j.corsci.2005.01.008 ↗
20. L. Wu, M. Taouil, S. Rao, E. J. Marinissen, S. Hamdioui, 2018 Electrical modeling of STT-MRAM defects. IEEE International Test Conference (ITC), https://doi.org/10.1109/TEST.2018.862474910.1109/TEST.2018.8624749 ↗
21. L. Tillie, E. Nowak, R. Sousa, M.-C. Cyrille, B. Delaet, T. Magis, A. Persico, J. Langer, B. Ocker, I. Prejbeanu, Data retention extraction methodology for perpendicular STT-MRAM. 2016 IEEE International Electron Devices Meeting (IEDM), 27.3. 1–27.3. 4 (2016). https://doi.org/10.1109/IEDM.2016.783849210.1109/IEDM.2016.7838492 ↗
22. H. Cui, J.-H. Park, J.-G. Park, Environmentally clean slurry using nano-TiO2-abrasive mixed with oxidizer H2O2 for ruthenium-film chemical mechanical planarization. Appl. Surf. Sci. 282, 844–850 (2013). https://doi.org/10.1016/j.apsusc.2013.06.06810.1016/j.apsusc.2013.06.068 ↗
23. Q. Mu, Z. Jin, X. Han, Y. Yan, Z. Zhang, P. Zhou, Effects of slurry pH on chemical and mechanical actions during chemical mechanical polishing of YAG. Appl. Surf. Sci. 563, 150359 (2021). https://doi.org/10.1016/j.apsusc.2021.15035910.1016/j.apsusc.2021.150359 ↗
24. Y. Li, M. Hariharaputhiran, S. Babu, Chemical–mechanical polishing of copper and tantalum with silica abrasives. J. Mater. Res. 16(4), 1066–1073 (2001). https://doi.org/10.1557/JMR.2001.014810.1557/JMR.2001.0148 ↗
25. M. Sivanandini, S. Dhami, B. Pabla, Chemical mechanical polishing by colloidal silica slurry. Int. J. Eng. Res. Ind. Appl. 3(3), 1337–1345 (2013)
26. S. Hanaoka, J.-M. Lin, M. Yamada, Chemiluminescence behavior of the decomposition of hydrogen peroxide catalyzed by copper (II)–amino acid complexes and its application to the determination of tryptophan and phenylalanine. Anal. Chim. Acta 409(1–2), 65–73 (2000). https://doi.org/10.1016/S0003-2670(99)00842-910.1016/S0003-2670(99)00842-9 ↗
27. V. Gorantla, S. Emery, S. Pandija, S. Babu, D. Roy, Chemical effects in chemical mechanical planarization of TaN: investigation of surface reactions in a peroxide-based alkaline slurry using Fourier transform impedance spectroscopy. Mater. Lett. 59(6), 690–693 (2005). https://doi.org/10.1016/j.matlet.2004.11.01010.1016/j.matlet.2004.11.010 ↗
28. A. Vijayakumar, T. Du, K. Sundaram, V. Desai, Polishing mechanism of tantalum films by SiO2 particles. Microelectron. Eng. 70(1), 93–101 (2003). https://doi.org/10.1016/S0167-9317(03)00398-810.1016/S0167-9317(03)00398-8 ↗
29. K. Assiongbon, S. Emery, C. Pettit, S. Babu, D. Roy, Chemical roles of peroxide-based alkaline slurries in chemical–mechanical polishing of Ta: investigation of surface reactions using time-resolved impedance spectroscopy. Mater. Chem. Phys. 86(2–3), 347–357 (2004). https://doi.org/10.1016/j.matchemphys.2004.03.01610.1016/j.matchemphys.2004.03.016 ↗
30. V. Petrykin, M. Kakihana, K. Yoshioka, S. Sasaki, Y. Ueda, K. Tomita, Y. Nakamura, M. Shiro, A. Kudo, Synthesis and structure of new water-soluble and stable tantalum compound: Ammonium tetralactatodiperoxo-μ-oxo-ditantalate (V). Inorg. Chem. 45(23), 9251–9256 (2006). https://doi.org/10.1021/ic060861u10.1021/ic060861u ↗
31. D. Bayot, M. Devillers, Peroxo complexes of niobium (V) and tantalum (V). Coord. Chem. Rev 250(19–20), 2610–2626 (2006). https://doi.org/10.1016/j.ccr.2006.04.01110.1016/j.ccr.2006.04.011 ↗
32. A.C. Dengel, W.P. Griffith, Studies on Transition metal peroxo complexes—IX Carboxylato peroxo complexes of niobium (V), Tantalum (V), Zirconium (IV) and Hafnium (IV). Polyhedron 8(11), 1371–1377 (1989). https://doi.org/10.1016/S0277-5387(00)86248-810.1016/S0277-5387(00)86248-8 ↗