Modeling of the effects of crystallographic orientation on electromigration-limited reliability of interconnects with bamboo grain structures
Source abstract
Abstract
We presented a model for the line-width-dependent grain structure statistics in bamboo interconnects. We then showed, using an electromigration simulation, that grain orientation-dependent interface diffusivities constitute a likely mechanism contributing to the variabilities in lifetimes observed in experiments.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Copper Interconnects and Reliability · Semiconductor materials and devices · Electronic Packaging and Soldering Technologies
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References (26)
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