Heat- and light-soaking behavior of RbF-treated Cu(In,Ga)Se2 solar cells with two different buffer layers
Source abstract
Abstract
Degradation in RbF post-deposition-treated (PDT) CIGS solar cells under heat/light/bias stress is evaluated for two different buffers, CdS and Zn(O,S). Initial efficiency of baseline CdS buffer devices is about 17.7% with and without RbF PDT. However, Zn(O,S) buffer devices show considerable improvement in net carrier concentration (NCV),VOC, and efficiency from 16.3 to 17.9% with RbF PDT. Under accelerated stress tests, CdS buffer devices show an increase inVOCunder open circuit (OC) light soaking irrespective of the alkali treatments, and the devices are relatively stable under short circuit (SC) stress. Zn(O,S) buffer devices, however, show a decrease inVOCunder all stress conditions irrespective of the alkali treatments. All performance metrics for Zn(O,S) buffer devices typically decreased with stress, resulting in significant efficiency loss. Device models show that an increase in recombination at the CIGS/Zn(O,S) interface and near interface doping can explain the degradation in these devices.Graphical abstract
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties · Copper-based nanomaterials and applications
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