Reduced electrical resistivity of reaction-sintered SiC by nitrogen doping
Source abstract
Abstract
A post heat treatment of reaction-sintered SiC at 1700 °C in nitrogen atmosphere significantly reduced electrical resistivity. A trace of insulating Si3N4 phase was detected via nitrogen heat treatment in high-resolution transmission electron microscopy observation; however, based on x-ray photoelectron spectroscopy, the evidence of nitrogen doping into SiC lattice has been claimed as the mechanism to the decreased resistivity. The increase of the total volume of SiC was apparent in x-ray diffraction during the nitrogen heat treatment, which was interpreted to stem from the growth of the nitrogen-doped intergranular SiC particles and surface doping of the primary SiC to reduce the contact resistance between the primary SiC particles.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced ceramic materials synthesis · Aluminum Alloys Composites Properties · Silicon Carbide Semiconductor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (26)
Show source-provided references
1. Investigation of grain-boundary segregation in ceramic oxides by analytical scanning transmission electron microscopy.
2. van Dijen · 1993 · Vol. 2 · 781–790
3. 10.1016/0272-8842(87)90039-310.1016/0272-8842(87)90039-3 ↗
4. Silicon/silicon carbide composite.
5. 10.1016/j.jeurceramsoc.2006.05.05310.1016/j.jeurceramsoc.2006.05.053 ↗
6. 10.2320/matertrans1989.35.82110.2320/matertrans1989.35.821 ↗
7. 10.1016/0272-8842(86)90023-410.1016/0272-8842(86)90023-4 ↗
8. 10.1111/j.1151-2916.1999.tb02149.x10.1111/j.1151-2916.1999.tb02149.x ↗
9. Phase stability of silicon carbide in the ternary system Si–C–N.
10. 10.1111/j.1551-2916.1988.tb00284.x10.1111/j.1551-2916.1988.tb00284.x ↗
11. 10.1016/S0272-8842(97)00024-210.1016/S0272-8842(97)00024-2 ↗
12. Making ceramic composites by melt infiltration.
13. 10.1111/j.1151-2916.1981.tb15906.x10.1111/j.1151-2916.1981.tb15906.x ↗
14. Azaroff · 1968
15. Toughened silicomp composites—process and preliminary properties.
16. 10.1111/j.1151-2916.1996.tb08723.x10.1111/j.1151-2916.1996.tb08723.x ↗
17. 10.1111/j.1151-2916.1991.tb06811.x10.1111/j.1151-2916.1991.tb06811.x ↗
18. 9 Jepps N.W. : Polytypism and polytype transformations in silicon carbide. Ph.D. Thesis, University of Cambridge,1979
19. The influence of impurities on the growth of silicon carbide by recrystallization.
20. 10.1023/A:100455270487210.1023/A:1004552704872 ↗
21. 10.1063/1.173023610.1063/1.1730236 ↗
22. 10.1111/j.1151-2916.1977.tb15505.x10.1111/j.1151-2916.1977.tb15505.x ↗
23. X-ray photoelectron spectroscopy of nitride layer on SiC by thermal nitridation using NH3.
24. 10.1016/j.actamat.2006.05.02010.1016/j.actamat.2006.05.020 ↗
25. 6 Fumio O. : Method of producing silicon carbide sintered body for heater, U.S. Patent No. 2007117722 (2007),
26. 10.1007/BF0064778110.1007/BF00647781 ↗