journal article·2002-08

Optical properties of Ho3+-, Er3+-, and Tm3+-doped BaIn2S4 and BaIn2Se4 single crystals

Sang-An Park, Mi-Yang Kim, Wha-Tek Kim, Moon-Seog Jin, Sung-Hyu Choe, Tae-Young Park, Kwang-Ho Park, Duck-Tae Kim

Journal of Materials Research· Volume 17· Issue 8
Publisher page

Abstract

BaIn2S4, BaIn2S4:Ho3+, BaIn2S4:Er3+, BaIn2S4:Tm3+, BaIn2Se4, BaIn2Se4:Ho3+, BaIn2Se4:Er3+, and BaIn2Se4:Tm3+ single crystals were grown by the chemical transport reaction method. The optical energy gap of the single crystals was found to be 3.057, 2.987, 2.967, 2.907, 2.625, 2.545, 2.515, and 2.415 eV, respectively, at 11 K. The temperature dependence of the optical energy gap was well fitted by the Varshni equation. Broad emission peaks were observed in the photoluminescence spectra of the single crystals. They were assigned to donor–acceptor pair recombination. Sharp emission peaks were observed in the doped single crystals. They were attributed to be due to radiation recombination between the Stark levels of the Ho3+, Er3+, and Tm3+ ions sited in C1 symmetry.
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Research context

OpenAlex topics: Crystal Structures and Properties · Chalcogenide Semiconductor Thin Films · Solid-state spectroscopy and crystallography

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References (13)

Show source-provided references
1. Dieke · 1968
2. Koster · 1963
3. 10.1063/1.128948510.1063/1.1289485 ↗
4. Bube · 1960 · 158–171
5. 10.1143/JJAP.20.148110.1143/JJAP.20.1481 ↗
6. Donohue · J. Electrochem. Soc., Solid State Sci. Technol. · 1974 · 121 · 137
7. 3. Kim W-T. , Park S-A. , and Jin M-S. (unpublished).
8. 10.1002/zaac.1981479081510.1002/zaac.19814790815 ↗
9. 10.1016/0031-8914(67)90062-610.1016/0031-8914(67)90062-6 ↗
10. 10.1017/CBO978051156499410.1017/CBO9780511564994 ↗
11. Pankov · 1971
12. 10.1063/1.36706610.1063/1.367066 ↗
13. Eisenmann · Rev. Chim. Min. · 1983 · 20 · 255