Effect of abrasive material properties on polishing rate selectivity of nitrogen-doped Ge2Sb2Te5to SiO2film in chemical mechanical polishing
Source abstract
Abstract
We investigated the polishing rate and selectivity of nitrogen-doped Ge2Sb2Te5(NGST) to SiO2film for different abrasive materials (colloidal silica, fumed silica, and ceria abrasives). They both were strongly dependant on abrasive material properties. The polishing rate of nitrogen-doped NGST decreased in the order ceria, fumed silica, and colloidal silica abrasives, which was determined by abrasive material properties, such as abrasive hardness, crystal structure, and primary and secondary abrasive sizes. In addition, the polishing rate slope of NGST film was not significantly different for different abrasive materials, indicating that the polishing of NGST film is mechanical dominant polishing. In contrast, the polishing rate slope of SiO2film decreased in the order ceria, fumed silica, and colloidal silica abrasives, indicating that the polishing of SiO2film is chemical dominant polishing. Furthermore, the difference in polishing rate slopes between NGST and SiO2film gave a polishing rate selectivity of NGST to SiO2film higher than 100:1 with colloidal silica abrasive.
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Research context
OpenAlex topics: Advanced Surface Polishing Techniques · Laser Material Processing Techniques · Nonlinear Optical Materials Studies
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References (24)
Show source-provided references
1. Current status of the phase change memory and its future.
2. Writing current reduction for high-density phase-change RAM.
3. 20 Lee J.W. , Yoon B.U. , Hah S. , Moon J.T. A planarization model in chemical mechanical polishing of silicon oxide using high selective CeO2slurry in Chemical-Mechanical Polishing 2001—Advances and Future Challenges,edited by S.V. Babu, K.C. Cadien, and H. Yano (Mater. Res. Soc. Symp. Proc. 671, Warrendale, PA, 2001), M5.310.1557/PROC-671-M5.3 ↗
4. 10.1149/1.220512010.1149/1.2205120 ↗
5. Lee · 2007 · 102
6. 10.1063/1.9761710.1063/1.97617 ↗
7. 10.1016/S0022-3093(01)00364-710.1016/S0022-3093(01)00364-7 ↗
8. 10.1063/1.168975610.1063/1.1689756 ↗
9. 10.1063/1.180520010.1063/1.1805200 ↗
10. 13 Tompa G.S. , Sun S. , Rice C.E. , Cuchiaro J. , Dons E. Metal-organic chemical vapor deposition (MOCVD) of GeSbTe-based chalcogenide thin films in Materials and Processes for Nonvolatile Memories II,edited by T. Li, Y. Fujisaki, J.M. Slaughter, and D. Tsoukalas (Mater. Res. Symp. Proc. 997, Warrendale, PA, 2007 110–0810.1557/PROC-0997-I10-08 ↗
11. Effect of the hydroxyl-ethyl-cellulose concentration in a silicon wafer polishing slurry on the wafer surface roughness.
12. Kim · 2007
13. 10.1063/1.135186810.1063/1.1351868 ↗
14. 10.1143/JJAP.39.277510.1143/JJAP.39.2775 ↗
15. A novel cell technology using N-doped GeSbTe films for phase change RAM.
16. Highly manufacturable high density phase change memory of 64 Mb and beyond.
17. 10.1063/1.272220310.1063/1.2722203 ↗
18. Zhang · 2006 · 821
19. 10.1111/j.1151-2916.1997.tb03122.x10.1111/j.1151-2916.1997.tb03122.x ↗
20. 21 Abiade J.T. , Yeruva S. , Moudgil B. , Kumar D. , Singh R.K. : Characterization of the chemical effects of ceria slurries for chemical mechanical polishing in Chemical-Mechanical Planarization—Integration, Technology and Reliability,, edited by A. Kumar, J.A. Lee, Y.S. Obeng, I. Vos, and E.C. Johns (Mater. Res. Soc. Symp. Proc. 867, Warrendale,PA, 2005), W8.310.1557/PROC-867-W8.3 ↗
21. 22 Abiade J.T. , Choi W. , Khosla V. , Singh R.K. : Investigation and control of chemical and surface chemical effects during dielectric CMP in Advances in Chemical-Mechanical Polishing,, edited by D.S. Boning, J.W. Bartha, A. Philipossian, G. Shinn, and I. Vos (Mater. Res. Soc. Symp. Proc. 816, Warrendale,PA, 2004), K9.510.1557/PROC-816-K9.5 ↗
22. The theory and design of plate glass polishing machines.
23. 10.1002/978352761774610.1002/9783527617746 ↗
24. 10.1016/0022-3093(90)90200-610.1016/0022-3093(90)90200-6 ↗